有機半導體分子之合成、薄膜形貌與場效電晶體性質研究

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研究生：	魏菱均 Ling-Chun Wei
論文名稱：	有機半導體分子之合成、薄膜形貌與場效電晶體性質研究 Synthesis, Film Morphology and Field-Effect Transistor Property of Organic Semiconductor Molecules
指導教授：	陶雨台 Yu-Tai Tao
口試委員:
學位類別：	碩士 Master
系所名稱：	理學院 - 化學系 Department of Chemistry
論文出版年：	2006
畢業學年度：	94
語文別：	中文
論文頁數：	120
中文關鍵詞：	場效電晶體、有機半導體
相關次數：	點閱：2 下載：0
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本研究主要以寡聚噻吩的衍生物DHB-4T, DFB-4T 及五環素的衍
生物DP-PT, DTh-PT, DTo-PT 做為有機半導體分子。在不同的基板
溫度下，以真空蒸鍍的方式將化合物沉積於二氧化矽表面以及用飽和
十八烷基三氯矽烷(OTS)、雙(三甲基矽)胺(HMDS)及苯甲基三氯矽烷
(BTS)等自組裝單層膜分子修飾過的二氧化矽表面上，研究薄膜結構
與場效電晶體性質關係。
藉由原子力顯微鏡影像及X-ray 繞射圖譜結果觀察分子在表面的
形貌：對DHB-4T 而言，是以接近站立的方式在表面堆疊，且晶體大
小隨著基板溫度的上升而變大；而五環素的衍生物幾乎為非晶相的堆
疊。場效特性則是在有機膜的上方沉積上金作為汲極與源極後，以半
導體參數分析儀量測。DHB-4T 為一正型的半導體材料，所得到的最
大場效載子遷移率隨著溫度變化可從0.028 上升到0.17 cm2V-1s-1；而
以五環素的衍生物為半導體層的電晶體所得到的最大場效載子遷移
率約10-3 cm2V-1s-1。
另一方面，將自組裝單層膜經過刷磨後，沉積上DHB-4T，所使
用的自組裝單層膜為十八烷基三氯矽烷(OTS/SiO2/Si)以及九烷基三
氯矽烷(NTS/SiO2/Si)。希望藉此觀察刷磨自組裝單層膜對於晶體顆粒
大小與場效載子遷移率(field-effect mobility)的影響。

Oligothiophene derivatives DHB-4T, DFB-4T and pentacene derivatives DP-PT, DTh-PT, DTo-PT were synthesized and characterized as the active channel material in the organic FET. Structure of thin-film as a function of substrate surfaces ( bare silicon dioxide (SiO2/Si) substrate, n-octadecyltrichlorosilane (OTS/SiO2/Si)-, benzyltrichlorosilane (BTS/SiO2/Si)-, and 1,1,1,3,3,3-hexamethyldisilazane (HMDS/SiO2/Si)-treated surfaces) and temperature were examined.
For DHB-4T, a near perpendicular molecular orientation was observed in most cases, with grain size increasing with increasing substrate temperature. Field effect mobilities were measured employing a top source-drain contact configuration. DHB-4T exhibited p-type semiconducting behavior with maximum field-effect mobility ranging from ~0.028 to ~0.17 cm2V-1s-1, depending on the substrate temperature. DP-PT and DTh-PT also exhibited p-type behavior with maximum field-effect mobilities ~ 10-3 cm2V-1s-1.
Additionally, DHB-4T was also deposited on a rubbed SAM of n-nonyltrichlorosilane (NTS/SiO2/Si) and n-octadecyltricholrosilane (OTS/SiO2/Si) surfaces to examine the effect of rubbing on the crystal size and charge mobility.

摘要............................................................................................................. I
ABSTRACT...............................................................................................II
總目錄...................................................................................................... III
圖目錄...................................................................................................... VI
表目錄...................................................................................................... XI
附錄.........................................................................................................XII
壹、序論.....................................................................................................1
1-1. 前言..................................................................................................1
1-2. 半導體與有機半導體簡介..............................................................2
1-2.1. 半導體簡介....................................................................................................2
1-2.2. 有機半導體簡介............................................................................................4
1-3. 有機半導體材料簡介......................................................................5
1-3.1. 正型( P-TYPE )半導體材料............................................................................5
1-3.2. 負型( N-TYPE )半導體材料............................................................................6
1-3.3. 高分子半導體材料........................................................................................7
1-4. 有機薄膜分子方向性之控制....................................................... 10
1-5. 有機半導體薄膜製備....................................................................11
1-5.1. 真空蒸鍍( VACUUM EVAPORATION ) .............................................................11
IV
1-5.2. 溶液塗佈( SOLUTION-PROCESSED DEPOSITION )...........................................12
1-6. 有機場效電晶體概論................................................................... 12
1-6.1. 有機場效電晶體元件結構..........................................................................13
1-6.2. 有機場效電晶體元件的操作原理..............................................................14
1-6.3. 有機場效電晶體的基本公式......................................................................16
1-7. 自組裝單層膜簡介及其在場效電晶體上的應用....................... 17
貳、研究動機與方法............................................................................. 20
參、實驗部份.......................................................................................... 21
3-1. 藥品與儀器................................................................................... 21
3-1.1. 實驗用藥品...................................................................................................21
3-1.2. 儀器...............................................................................................................22
3-2. 合成步驟....................................................................................... 23
3-3. TGA 測量...................................................................................... 32
3-4. DSC 測量...................................................................................... 32
3-5. 元件製作....................................................................................... 32
3-5.1. 清洗矽晶片...................................................................................................32
3-5.2. 製作自組裝單層膜.......................................................................................33
3-5.3. 刷磨自組裝單層膜.......................................................................................33
3-5.4. 蒸鍍有機材料...............................................................................................34
3-5.5. 蒸鍍電極.......................................................................................................34
3-6. X 光繞射儀................................................................................... 34
V
3-7. 原子力顯微鏡............................................................................... 36
3-8. 半導體參數分析儀....................................................................... 37
肆、結果與討論...................................................................................... 39
4-1. 材料合成....................................................................................... 39
4-2. DSC 及TGA 之測量.................................................................... 41
4-3. 元件製作與性質量測................................................................... 45
4-4. DHB-4T 分子蒸鍍膜探討........................................................... 47
4-4.1. X-RAY 繞射光譜的探討..............................................................................47
4-4.2. 原子力顯微鏡結果討論..............................................................................58
4-4.3 電性的探討..................................................................................................67
4-4.4 刷磨自組裝單層膜對DHB-4T 分子蒸鍍膜之效果探討.........................74
4-5. 五環素衍生物分子蒸鍍膜探討................................................... 91
4-5.1. X-RAY 繞射光譜的探討..............................................................................92
4-5.2. 原子力顯微鏡結果討論..............................................................................95
4-5.3. 電性的探討................................................................................................101
伍、結論................................................................................................ 106
陸、參考文獻........................................................................................ 107

                                

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