本論文是利用簡單的四方晶格光子晶體結構製作出具有高對稱性的類光子晶體，並討論其對發光元件出光行為的影響。
在模擬方面，利用簡化後的傅立葉光學理論為模型，利用Matlab強大的矩陣運算功能來初步比較各式類光子晶體結構所產生的遠場繞射圖形，並將結果與實驗數據和前人研究相對照。
在實際製作方面，係利用奈米壓印搭配四方晶格光子晶體結構，透過旋轉模具的簡單方式進行多次壓印，製作出高對稱性的類光子晶體結構，在完成一次壓印、二次壓印 (Rotate 0°/ 45°) 、三次壓印 (Rotate 0°/30°/60°)、四次壓印 (Rotate 0°/22.5°/45°/67.5°)、八次壓印(Rotate 0°/11.25/22.5°/33.75/45°/56.25/67.5°)的類光子晶體PDMS (Polydimethylsiloxane)薄膜後，我們實際量測各式類光子晶體構成之外部出光結構對LED出光光形及OLED效能提升的影響，結果顯示隨著壓印的次數增加，元件的出光光形變的比較均勻，同時效能也提高，以紅光OLED為例，八次壓印的出光效率可以達到34%的增幅。此外我們也將類光子晶體結構製作在ITO上，以形成OLED內部出光結構，結果得到八次壓印的類光子晶體其能量轉換效率可達37%的增幅。

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