射頻磁控濺鍍法製備大面積的單層石墨薄膜｜國立清華大學博碩士論文庫

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研究生：	林孟佑 Lin, Meng-Yu
論文名稱：	射頻磁控濺鍍法製備大面積的單層石墨薄膜 Large area graphene prepared by high temperature FR-sputtering
指導教授：	吳孟奇 Wu, Meng-Chyi 林時彥 Lin, Shih-Yen
口試委員:
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電子工程研究所 Institute of Electronics Engineering
論文出版年：	2010
畢業學年度：	98
語文別：	英文
論文頁數：	52
中文關鍵詞：	單層石墨薄膜
相關次數：	點閱：2 下載：0
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大面積的單層石墨薄膜在製作電子元件上是有其必要性的。到目前為止，雖然CVD成長以及SiC昇華這兩種方式廣泛運用在製作大面積的石墨薄膜上，但是其表面的均勻性還是需要改善。在這篇論文裡，我們試著使用射頻磁控濺鍍法將我們的石墨薄膜高溫成長於Si(111)的基板。藉由拉曼光譜以及x光光電子能譜，我們發現隨著成長溫度的提升，產生了更多的sp2鍵結以及D-peak高度的提升。而這些現象指出了非晶石墨薄膜的形成。另外，藉降低成長功率，D-peak/G-peak的比例也有明顯的增高。而這可以歸因於在不同的濺鍍功率下會產生不同大小的碳塊沉積在基板上，而較小塊的碳塊會更容易形成鍵結，進而形成石墨薄膜。此外，我們也使用膠帶剝離法來製備石墨薄膜及製作元件，拉曼及電性的量測結果會分析於論文內。

Large-area uniform graphene is required for the development of graphene electronics. Until now, although large-area graphene films can be prepared by either chemical-vapor deposition or SiC substrate sublimation, the uniformity of the films is still unacceptable for practical applications. In this thesis, graphene films are grown on Si (111) substrates by using a RF-sputtering system at high temperatures. Through XPS and Raman measurements, increasing sp2 bonding compositions and D-peak intensities with increasing growth temperatures are observed, which suggest a amorphous carbon film with graphene grains is obtained via this approach. Also observed is the increase of D-peak/G-peak ratios with decreasing RF powers. The results suggest that the growth of graphene films with even better uniformity by using the RF sputtering technique is limited by the C flake sizes deposited on the substrates at the first place. The phenomenon indicates that by supplying even smaller C flakes, graphene films with better crystalline qualities could be obtained. For comparison, the Raman spectrums and I-V characteristics of graphene flakes and devices fabricated by using exfoliation of Scotch tapes from the HOPG are also shown in this thesis.

Contents
Abstract (in Chinese)                          I
Abstract (in English)                          II
Contents                                    III
Chapter 1 Introduction                        1
1-1    Motivation and methods to fabricate grapheme           1
1-2    Atomic structure, band structure and raman
spectrum of graphene                                2
1-3    Application and graphene device                       3

Chapter 2 Equipments                                11
2-1 Ratio frequency sputtering system              11
2-2 Scanning Electron Microscope (SEM)           12
2-3 Micro-Raman Spectroscopy (μ-RS)             13
2-4 X-ray photoelectron spectroscopy (XPS)         14

Chapter 3 Electrical properties of few layered
graphene prepared by exfoliation method        21
3-1 Exfoliation graphene sample preparation        21
3-1-1 Temperature dependent on exfoliation method
3-1-1-1 Experiment                                  22
3-1-1-2 Result and discussion                          22
3-2 Graphene channeled device fabrication          23
3-2-1 FLG channeled device characteristic
3-2-1-1 Experiment                                  23
3-2-1-2 Result and discussion                          23
3-2-2 the effect of current annealing sample
3-2-2-1 Experiment                                  24
3-2-2-2 Result and discussion                          24
3-3 Conclusions                                 25
Chapter 4 large area graphene fabricated by RF
sputtering                                         32
4-1 The effect of graphene film grown under different RF
   power                                       33
4-1-1 Growth rate calibration of carbon film
4-1-1-1 Experiments                                33
4-1-1-2 Results and Discussion                        34
4-1-2 The crystallized structure by plasma power difference
4-1-2-1 Experiments                                34
4-1-2-2 Results and Discussion                        35
4-1-3 Conclusions                             36
4-2 The effect of grapheme film grown under different
growth temperature                           36
4-2-1 Forming of 2D structure
4-2-1-1 Experiments                                37
4-2-1-2 Results and Discussions                       37
4-2-2 The crystallized structure by growth temperature difference
4-2-2-1 Experiments                                38
4-2-2-2 Results and Discussions                       38
4-2-3 Conclusions                                    38
4-3 The effect of graphene film grown under different
   substrate                                    39
4-3-1 Hexagonal structure substrate effect on graphene growth
4-3-1-1Experiments                                 39
4-3-1-2 Results and Discussions                       39
4-3-2 Conclusions                                    40
4-4 Conclusion                                  40
Chapter 5 Conclusions                         51
Reference                                    53

                                

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