利用架在同步輻射光之臨場X光的濺鍍系統，來研究Ta2O5成長在Si基板上表面形貌的變化。在沉積多晶形的Ta2O5的薄膜成長初期，Ta2O5是以島狀物聚集的方式成長，並且島狀體會慢慢形成完整的平面使得表面粗糙度會慢慢的下降；當薄膜繼續成長到80nm時，粗糙度會漸漸的上升約到20nm，而密度也接近於理論的塊材密度。而對於非晶形的薄膜而言，相較之下會比較平滑，粗糙度較低，但是薄膜密度相對之下也比較小。

The real time change of surface morphology during the RF magnetron sputtering Ta2O5 films on Si substrates was studied by the fixed angle X-ray reflectivity measurement. During the early stage of poly-crystalline Ta2O5 growth, the surface roughness change reveals a surface morphology of island nucleation and island coalescence processes. After the thickness of 7 nm, the surface roughness increases up to more than 2 nm at the thickness of 80 nm. For crystalline Ta2O5 films, the density of the sputtering Ta2O5 films was also increased and reaches the value of bulk value only when the thin films thicker than 80 nm. For the amorphous sputtering film, the surface roughness is smoother and density is smaller.

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