摘要
離子感應場效電晶體(ISFET)為一種結合電化學原理與場效電晶體的微型感測器，利用MOSFET之基本原理，將其金屬閘極以參考電極/電解液/離子感應膜（絕緣層）取代，因此ISFET同時具有離子選擇與場效電晶體元件的特性。
本論文係以濺鍍法(Sputter)沈積氧化鋅(ZnO)做為氫離子感應膜，藉由通以不同電漿氣體含氧量，在不同基板溫度下，於p-type (100)矽基板上沈積感應薄膜製備ZnO/ Si 之EIS結構，經由C-V量測來探討平能帶電壓(Flat band voltage)變化的關係，以瞭解做為氫離子感應膜的感測響應度。此外，薄膜的特性利用化學分析電子儀(ESCA)、能量散佈光譜儀(EDS)、X光繞射分析與原子力顯微鏡(AFM)做各項的分析。
由實驗結果發現，在基板溫度在室溫下，氧化鋅薄膜於電漿氣體含氧量35%下，於酸鹼液pH1~pH11範圍所獲得之感應靈敏度及穩定性為最佳，其感測度約為56.61 mV/pH。

Abstract
The ion sensitive field effect transistor (ISFET) is a microsensor consists of the theorem of electrochemistry and the characteristic of a field effect transistor. The principle of the MOSFET is be used for ISFET. The metalline gate of the MOSFET is substituted for reference electrode / electrolyte / insulator. Hence, ISFET is a device composed of a ion selective electrode and a MOSFET device.
In this thesis the zinc oxide membrane has been prepared by sputter, Sputter method as a novel pH-sensitive layer under different plasma gas flow rate (Ar/O) and substrate temperatures. The ZnO membrane was directly deposited on the p-type silicon substrate by sputter to form the ZnO / Si EIS structure. The variations of flat band voltage were reported by C-V measurement to survey the sensitivity of membrane. The characteristics of membrane were measured and analysed by Electron spectroscopy for chemical analysis (ESCA), Energy dispersive spectrometer (EDS), n&k, X-ray diffraction and Atomic force microscopy (AFM), respectively.
Experimental results show that the fabrication parameters and characteristics of ZnO membrane are determined at plasma gas oxygen percentage 35%, the substrate temperature 25℃ via the EIS structure. There exhibits the best pH response of about 56.61 mV/pH in the range of pH 1-11.

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