本論文之研究重點為奈米壓印製程之殘餘層移除，探討壓印參數對壓印後殘餘層厚度之影響性，以及移除殘餘層之方法，利用實驗和量測，了解參數間的關係，增加奈米結構完整性，以提升後續lift-off製程之穩定性。
實驗從平面壓印出發，再將平面壓印研究中得到的結果與趨勢運用到滾筒壓印上。本文採用紫外光奈米壓印，薄膜材料選擇低黏度UV光阻，以達到較佳的模具填充能力並有效減低殘餘層厚度；基板則是選擇具有透光性及可撓性的聚對苯二甲酸乙二酯(Polyethylene terephthalate, PET)材料。在壓印的過程中，對殘餘層厚度具影響性之參數有壓印力、壓印時間，以及光阻塗布厚度；另一方面，殘餘層移除的方法是採用電漿蝕刻，蝕刻過程之兩大重要因子為蝕刻率以及對結構的側向蝕刻率影響，而影響的參數包含Ar流速、O2流速以及電漿功率。由於本文所採用之基板為高分子材料，實驗量測將透過穿遂電子顯微鏡(SEM)搭配聚焦離子束切割儀( FIB)進行。
本文研究結果發現，在壓印的製程中光阻的塗佈厚度以及均勻性扮演著相當重要的角色，隨著光阻初始厚度越薄，最後所得到的殘餘層厚度也會跟著減少；在後續電漿蝕刻移除殘餘層製程中，利用較高的氬氣流量以及電漿功率，搭配較短的製程時間，能在維持奈米結構完整性的情況下成功的移除殘餘層；本文已能在軟性基板上得到無殘餘層的奈米結構。

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