在矽晶太陽能電池現階段的發展上，效率方面已經面臨物理極限瓶頸。除了效率的追求，成本考量也是重要課題。本文利用P型矽基板製作太陽能電池，以離子佈植取代傳統磷擴散，除了少了磷玻璃去除與PN接面絕緣化兩道製程步驟，較於擴散的製程更能控制接面的深度與輪廓，也有較佳的均勻度，以量產的角度來看，能達到效率的提升與成本的降低。本篇採正面磷佈植方式形成P-N接面，背面以硼佈植及鋁漿印刷形成全面BSF的狀況。利用少數載子生命週期與片電阻的量測，來找出摻雜的最佳條件以及阻擋層對於佈植損傷與接面深度控制的改善與否。以之沉積於電池正面，將氮化矽同時作為抗反射層與離子佈植的阻擋層，降低接面處的磷濃度亦減少製程。透過阻擋層厚度、佈植劑量與能量、以及網印漿料的選擇等的調整，最佳化P型矽晶太陽能電池。

Silicon solar cell development has faced its major bottleneck in efficiency improvement. While improving the manufacturing processes, cost control also needs to be considered.
In this study, we propose a new method for the first time to use p-type silicon wafers to fabricate solar cells. Instead of traditional phosphorus diffusion, we use the ion implantation technique to run the process. By doing so, not only can processes of phosphorus glass removal and edge isolation be eliminated, but also a shallower diffusion depth and a sharper dopant profile can be reached. This helps to speed up the process and improve the performance, and thus to reach the goal of both cost saving and performance improvement.
The front side of a p-type silicon wafer take phosphorus implanted junction, and the back side take boron implanted BSF (back-surface field). Minority carrier lifetime and sheet resistance data are analyzed to find the optimum doping condition, revealing the status of implantation damage and depth control.
In this study, a silicon nitride layer is deposited on the front side of the solar wafer as a barrier layer and anti-reflection layer before the ion implantation. This helps to reduce the depth of junction and save the process step. By adjusting the barrier layer thickness, implantation dose and implantation energy, we find the best conversion efficiency of the implanted silicon solar cell.

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