我們使用MOCVD沉積在Conventional sapphire substrate (CSS) 以及Patterned sapphire substrate (PSS) 為基板的氮化鎵晶圓製作了氮化鎵PIN二極體，並設計I-GaN的厚度為5um，希望能藉此提高二極體的崩潰電壓。為了改善氮化鎵PIN二極體特性，我們藉由PE-ALD來沉積Al2O3薄膜當作氮化鎵PIN二極體的側壁保護層，這個保護層是用來減少邊緣效應。另外我們也設計一種新的結構來達到自我保護的作用，用來改善元件的功率損耗。
本論文做了電性的探討，包含了電流-電壓、電容-電壓特性和高溫下DTLS的量測。實驗結果顯示，Al2O3的側壁保護層和我們設計出的新結構，能有效地提升崩潰電壓並且降低逆向電流。然而在I-V曲線方面，得到不如我們所預期的現象，透過DLTS的分析可以觀察出兩種不同的磊晶缺陷在CSS和PSS的變化。

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