本論文研究電子束微影，內容包含兩部分。第一部份將化學微縮製程應用於電子束微影系統。微縮比例隨著擴散烤溫增加而上昇；而對於擴散烤時間則無明顯關係。晶圓圖案均勻度亦隨採用此方法而有改善。但是，隨著洞圖案尺寸變小，而微縮反應只發生於洞圖案上方，下方無預期的微縮效應。
本論文的第二部份，應用放射性示蹤劑研究電子束阻劑內金屬離子遷移與吸附行為。並且對於重要製程參數，例如：烘烤時間、烘烤溫度與不同矽基材（bare silicon（111）, bare silicon（110）, bare silicon（100）, polysilicon, oxide, nitride）皆有評估。結果指出阻劑內溶劑會影響遷移比例。此外，本論文提供擴散模式去描述結果。對於不同面矽基材不同擴散結果也以用結構模型解釋。

The simple and low-cost chemical shrink method was applied for electron beam resists. The shrink ratio increased with diffusion bake temperature and didn’t obviously depend on diffusion bake time. The uniformity of CD on each die could be improved by this method. As the hole become smaller, the shrink reaction could not achieve at the bottom.
In the second part of this thsis, the radioactive tracer technique was applied to investigate metal migration and adsorption behavior for electron-beam resist. The important process parameter, viz., baking temperature, baking time, the type of substrate （i.e., bare silicon（111）, bare silicon（110）, bare silicon（100）, polysilicon, oxide, nitride）were evaluated. Our results indicated that solvent evaporation was found to have a significant effect on impurity.In addition, we offer diffusion model to describe result. The different face of bare silicon was explained by structure model.

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