現今在矽基板金屬氧化物半導體的發展著重於研究能取代氧化矽之高介電係數電介值電極相關應用。我們之前成功地論證了氧化鎵釓/砷化鎵異質結構出色的電性及熱穩定性。近來，我們希望延伸我們的研究利用分子束磊晶系統成長高介電係數材料氧化鎵釓於矽基板上。利用X光成分分析技術(X-ray photoelectron spectroscopy)可得知成長在矽基板上的薄膜主要成分結構可分成三層，包括主要的氧化釓薄膜，在氧化物與矽基板交接面有一層釓矽酸鹽介面層，在表面部分則是氧化鎵與氧化釓的混合物。X光反射率(X-ray reflectivity)的量測可得到各層的厚度以及各介面的表面粗糙度。薄膜結構分析利用高解析度X光繞射分析(High-resolution X-ray diffraction)，X光繞射分析得知超優質的單晶氧化釓成功地磊晶成長在矽基板上，其晶格不匹配比率小於百分之一，其薄膜為立方體的結構。

The current trend of Si CMOS scaling calls for replacing SiO2 with high k dielectrics in gate related applications. Excellent electrical properties and thermodynamic stability of the Ga2O3(Gd2O3)/GaAs hetero-structures are demonstrated in our previous work. Recently, we have extended our studies of employing high k materials Ga2O3(Gd2O3) to passivity Si surface by our in-situ molecular beam epitaxy (MBE) growth method. Composition of the as grown film was analyzed by X-ray photoelectron spectroscopy analysis. The X-ray photoelectron spectroscopy result implies the composition of the deposited films on Si substrate can be separated into three layers. These include a main Gd2O3 films, a gadolinium silicate interfacial layer at oxide/substrate interface, and a mixture of Ga2O3 and Gd2O3 layer on the surface. Studies using X-ray reflectivity measurement have shown the thickness of three layers and the roughness at their interfaces. Structural and morphological studies were carried out by high-resolution X-ray diffraction. High-quality nano-scale single-crystal Gd2O3 films have been grown epitaxially on Si (111) with a lattice mismatch of <1%. The structure of the Gd2O3 films is a cubic phase.

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