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研究生： 魏孝寬
Wei, H. K.
論文名稱： 射頻大氣電漿束之研究
Study of Radio Frequency Atmospheric Pressure Plasma Jets
指導教授： 寇崇善
Kou, Chwung-Shan
口試委員:
學位類別： 博士
Doctor
系所名稱： 理學院 - 物理學系
Department of Physics
論文出版年： 2009
畢業學年度： 97
語文別： 中文
論文頁數： 304
中文關鍵詞： 大氣電漿 、液晶配向 、碳膜沉積
外文關鍵詞： atmospheric pressure plasma, liquid crystal alignment, carbon film depostion
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    • 本論文研究目的在於發展低溫、均勻且穩定的射頻大氣電漿束，以氦氣（He）為主要研究對象，藉由實驗來瞭解其放電特性並建立一簡單的電漿阻抗模型以評估電漿密度。此外，並將此射頻大氣電漿束應用於液晶配向技術及非晶碳膜沈積。
    本研究成功地發展一低溫、均勻且穩定的射頻大氣電漿束（atmospheric pressure plasma jet，APPJ），利用理論模型推得電漿密度介於1011 - 1012 cm-3。由光譜量測結果推得He APPJ其電子激發溫度為0.16 eV；He APPJ中的活化粒子以He亞穩態（706.52 nm）、N2+游離態（391.44 nm）及O原子激發態（777.19 nm）等為主。操作在相同的RF功率及氣體流量下，Ar APPJ的電漿密度高於He APPJ。
    本研究成功地發展一低溫、均勻且穩定的線型大氣電漿束（linear atmospheric pressure plasma source，LAPPJ），可產生50 mm長之線型大氣電漿束，其結構簡單且可容易擴大放電尺寸，搭配二維移動平台可達到全面積的處理。利用理論模型推得電漿密度可達1012 cm-3。由光譜量測結果推得He LAPPJ其電子激發溫度介於0.106 ~ 0.239 eV；He LAPPJ中主要的活化粒子包括了He亞穩態（706.52 nm）、N2激發態（337.13 nm）、N2+游離態（391.44 nm）及O原子激發態（777.19 nm）等。
    本研究成功地利用Ar APPJ進行液晶配向，且獲得良好的配向效果，預傾角可達2.32°，此法提供了一新穎、便利的處理方式，可以免去接觸式配向所帶來的問題。經過Ar APPJ處理後，配向膜表面產生更多的C-O及C=O鍵結，即提供更多電偶極與液晶分子作用來達到液晶配向。
    本研究成功利用He LPPJ混合乙炔（C2H2）以掃瞄的方式進行非晶碳膜薄膜沈積並成功長出表面平整、光學穿透率高的非晶碳膜。並進一步利用此非晶碳膜作為液晶配向膜，利用低氣壓電漿束進行配向處理，可達到良好的配向效果。

    第 一 章 緒論 1 1.1 前言 1 1.2 大氣電漿源簡介 1 1.3 非晶碳膜簡介 7 1.4 液晶配向技術簡介 9 1.5 研究目的 12 參考文獻 13 第 二 章 文獻回顧 17 2.1 大氣壓電漿源氣體放電原理 17 2.1.1 氣體游離過程簡介 17 2.1.2 氣體崩潰機制 19 2.1.3 產生均勻放電的方法 31 2.2 大氣射頻電容式偶合電漿放電特徵 35 2.2.1 二種放電模式 35 2.2.2 放電電壓與電流關係圖 39 2.3 非晶質碳簡介 42 2.3.1 非晶碳膜的應用 42 2.3.2 非晶碳膜的分類 42 2.3.3 非晶碳膜之Raman光譜 45 2.4 液晶配向技術簡介 48 2.4.1 接觸式液晶配向技術 48 2.4.2 非接觸式液晶配向技術 50 參考文獻 53 第 三 章 實驗設備與分析方法 59 3.1 大氣電漿源設備 59 3.1.1 大氣電漿束主體 59 3.1.2 線型大氣電漿源主體 60 3.1.3 電漿源周邊設備 61 3.2 電漿源特性量測系統 62 3.2.1 電性量測 62 3.2.2 阻抗量測系統 63 3.2.3 光譜量測系統與分析 64 3.2.3.1 光譜量測系統 64 3.2.3.2 放射光譜強度分析 65 3.2.3.3 電子激發溫度的計算 67 3.3 材料分析設備與方法 68 3.3.1 掃瞄式電子顯微鏡 68 3.3.2 原子力顯微鏡 68 3.3.3 化學分析電子儀 69 3.3.4 Raman光譜 69 3.3.5 Fourier轉換紅外線光譜儀 70 3.3.6 UV-VIS光譜量測 70 3.3.7 密度量測 70 3.3.8 鉛筆硬度測試機 71 3.3.9 接觸角量測系統與表面分析 72 3.3.9.1 接觸角量測系統 72 3.3.9.2 表面能分析 73 3.4 液晶配向分析設備 75 3.4.1 偏光顯微鏡 75 3.4.2 預傾角量測系統 76 參考文獻 77 第 四 章 射頻大氣電漿束之特性分析 79 4.1 前言 79 4.2 實驗方法 79 4.3 電漿理論模型 80 4.4 結果與討論 84 4.4.1 大氣電漿束輝光放電影像 84 4.4.2 大氣電漿束放電特性 85 4.4.3 電漿密度與鞘層電容 87 4.4.4 電漿光譜分析 95 4.5 結論 108 參考文獻 109 第 五 章 利用大氣電漿束於含氫非晶碳膜進行液晶配向 111 5.1 前言 111 5.2 實驗方法 113 5.3 結果與討論 116 5.3.1 配向效果分析 116 5.3.2 穿透率的變化 118 5.3.3 表面形貌 118 5.3.4 處理過程的光譜 120 5.3.5 ESCA分析 120 5.3.6 水滴角量測 123 5.3.7 Raman光譜分析 123 5.3.8 液晶配向機制探討 125 5.4 結論 127 參考文獻 128 第 六 章 射頻線型大氣電漿源之特性分析 131 6.1 前言 131 6.2 實驗方法 132 6.3 電漿理論模型 134 6.4 結果與討論 137 6.4.1 線型大氣電漿源輝光放電影像 137 6.4.2 線型大氣電漿源放電特性 140 6.4.3 電漿密度 149 6.4.4 電漿光譜分析 154 6.5 結論 163 參考文獻 165 第 七 章 利用射頻大氣電漿源掃瞄式沈積非晶碳膜 167 7.1 前言 167 7.2 實驗方法 168 7.3 結果與討論 173 7.3.1 表面形貌與沈積速率 173 7.3.2 非晶碳膜密度 199 7.3.3 電漿光譜分析 203 7.3.4 ESCA分析 207 7.3.5 Raman分析 226 7.3.6 FTIR分析 241 7.3.7 UV-VIS Transmittance分析 250 7.3.8 表面能分析 258 7.3.9 硬度分析 276 7.3.10 與低氣壓電漿源沈積非晶碳膜的比較 277 7.3.11 液晶配向測試 283 7.4 結論 290 參考文獻 294 第 八 章 總結 299

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