研究生: |
蔡偉駿 Tsai, Wei-Chun |
---|---|
論文名稱: |
紫外光臭氧處理空間電荷限制電晶體之影響 The influence of UV Ozone treatment on space charge limited transistor |
指導教授: |
洪勝富
Horng, Sheng-Fu |
口試委員: |
孟心飛
Meng, Hsin-Fei 冉曉雯 Zan, Hsiao-Wen 趙宇強 Chao, Yu-Chiang |
學位類別: |
碩士 Master |
系所名稱: |
電機資訊學院 - 電子工程研究所 Institute of Electronics Engineering |
論文出版年: | 2014 |
畢業學年度: | 102 |
語文別: | 中文 |
論文頁數: | 45 |
中文關鍵詞: | 空間電荷限制電晶體 、紫外光臭氧 、有機發光二極體 |
外文關鍵詞: | space-charge-limited-transistor, organic light emitting diode, uv ozone |
相關次數: | 點閱:1 下載:0 |
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有機電晶體的發展在近年來已越趨活躍,其同時擁有無機半導體製程所欠缺的低成本與製程簡單、可撓性與大面積化等優點。本論文將針對空間電荷限制電晶體(space-charge-limited transistor, SCLT)元件內部製程改善,使SCLT具有高開關特性、高輸出電流、高穩定度、高重複性以及可低成本的液態製程。過去的SCLT雖然在上注入元件操作下,已經可以達到相當優秀的開關特性;但是為了驅動有機發光二極體(Organic Light Emitting Diode, OLED),必須讓SCLT元件整體的輸出電流、開關特性增加。以往為了增加元件的輸出電流會使用自組裝單層分子(Self-Assembled Monolayer,SAM)來處理空間電荷限制電晶體(SCLT)的垂直奈米孔洞通道,大幅提升輸出電流;本論文則是以紫外光臭氧UV Ozone來處理奈米孔洞基版及元件基極(base electrode),改善元件的絕緣度,並且成功提升了SCLT的輸出電流密度高達10mA/cm2及電晶體開關比特性高達105,此方法同時具有低成本、製程簡單及良好穩定度的優勢。
The organic transistor has become more and more active in recent years due to its advantages such as lower cost, simplicity in process, flexibility and high uniformity in large area which can hardly be found in the silicon transistor. This thesis will restrict transistors (space-charge-limited transistor, SCLT) components for internal process improvement space charge, so SCLT with high switching characteristics, high output current, high stability, high repeatability and low-cost liquid processes. Although SCLT can obtain astonishing
switch ability when working as top-injection device . But in order to drive organic light-emitting diodes (Organic Light Emitting Diode, OLED), must let SCLT element overall output current, increasing the switching characteristics. Elements of the past in order to increase the output current using self-assembled monolayer (Self-Assembled Monolayer, SAM) to handle the space-charge-limited transistor (SCLT) vertical nano porous channels, significantly increasing the output current; This thesis is based on the UV Ozone to process light nano porous base element and the base version (base electrode), the degree of improvement of the insulation element, and to enhance the success of the output current density to SCLT 10mA/cm2 ratio characteristic and high switching transistor105, this method also has the advantages of low cost, process simplicity and good degree of stability.
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