LTPS-TFTs元件，由於晶粒邊界與晶粒內之缺陷以及其較陡的汲極端接面，使其關閉時的漏電流特性與一般的MOSFETs元件不同。為了分析LTPS-TFTs元件之漏電特性，我們利用製程模擬軟體定義出元件的二維架構，再而藉由電性模擬軟體讀取經由其建構完成的元件架構，了解漏電之成因，進而提出藉由熱電洞注入降低汲極端電場的方法。論文中並模擬討論在不同量的熱電洞及儲存位置對漏電流特性之影響。在實驗方面，本論文探討熱電洞注入效應對元件的影響，利用能帶間熱電洞的注入效應，改善閘極引發汲極漏電流(Gate-induced-drain-leakage current, GIDL)，增加低溫複晶矽薄膜電晶體的開關電流比，且針對修復速度、可靠度做詳細的分析及討論，達到優越的元件特性。

LTPS-TFTs, due to the high density defects located at the grain boundary and the in-grain as well as sharper drain junction, exhibit unique off-sate leakage current characteristics. The two-dimensional process simulator was adopted for constructing the poly-Si TFT structure, and then electric characteristics of the device were then evaluated by the 2D-device simulator. In this simulation, it was found that by introducing hot holes in the dielectric film, GIDL can be effectively suppressed. Through a series of simulations, the amount as well as the location of the position charge stored in the dielectric layer for the best suppression effect is analyzed. Based on the experimental results, the GIDL current can be significantly suppressed after band-to-band hot hole (BBHH) stress. This stress method is able to increase the on/off ratio of the LTPS-TFTs. Finally, the speed of hot hole injected and the stability of the suppression effect is investigated.

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