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研究生: 于岳平
Yueh-Ping, Yu
論文名稱: 新式具高動態範圍影像感測器元件之研究
A Novel CMOS Image Sensing Device with High Dynamic Range
指導教授: 金雅琴
Ya-Chin, King
口試委員:
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 電子工程研究所
Institute of Electronics Engineering
論文出版年: 2004
畢業學年度: 92
語文別: 英文
論文頁數: 67
中文關鍵詞: 感測元件高動態範圍光閘極
外文關鍵詞: CMOS, image sensor, high dynamic range, photogate
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  • 在最近十年的影像感測器的應用上,金氧半導體主動式的影像感測器已經慢慢的普遍起來,相較於CCD比較弱勢的暗電流方面,隨著製程技術的進步已經被克服了,所以在設計上動態範圍變成是需要被克服的主要缺點,因此本篇論文利用標準的0.25-µm金氧半導體邏輯製程開發了一種新式具高動態範圍的主動式影像感測器元件,它的操作原理跟傳統的三顆電晶體的架構是一樣的,只是在光閘極元件的閘極端加上一個控制的脈衝電壓,這樣的想法是來自於之前實驗室學長所提出消除暗電流的架構繼續做動態範圍的延伸,在照光週期中利用控制閘極上的電壓造成不同的電容來調變光靈敏度,使輸出的特性曲線發生轉折進而達到增加動態範圍的目的。從實驗的結果中可以證實藉由延遲脈衝電壓加在閘極上的時間,我們確實可以得到延伸動態範圍的效果,而且光感測元件的設計也會影響到動態範圍,因為元件的設計會影響耦合的效果以及在光二極體的操作模式下光電荷的儲存容量。所以只要經由元件的設計跟光閘極上控制電壓時脈的最佳化,就可以有高的動態範圍。至於影像感測的靈敏度也可以利用最佳化光閘極跟光二極體的面積比,以及控制光閘極上脈衝電壓的高低來改善。實驗的數據中可以證明經過這樣最佳化的設計,影像感測器就可以兼顧到在低照度下的靈敏度和高照度下動態範圍的延伸。


    A high dynamic range pixel has been developed for an active-pixel CMOS image sensor, by using a standard 0.25-µm CMOS logic process. The operation method is the same with conventional 3T pixel cell, and applying a control pulse voltage to photo-gate. The experimental results demonstrate that extended dynamic range is obtained when we delay the pulse voltage to apply to photo-gate, and sensing device design also affects dynamic range. So, the high dynamic range can be approached by optimizing pixel design and photo-gate pulse timing. The imaging sensitivity can be improved through optimizing the PG to PD area ratio and the bias pulse high level. The experimental results demonstrate the pixel can achieve both high sensitivity at low illumination and extended dynamic range for high illumination.

    ABSTRACT……………………………………………………………II ACKOWLEGEMENT………………………………………………………IV LIST OF CONTENTS……………………………………………………V LIST OF FIGURES……………………………………………………VII LIST OF TABLES………………………………………………………IX CHAPTER 1 : INTRODUCTION…………………………………………10 CHAPTER 2 : RESEARCHES OF DYNAMIC RANGE……………………12 2.1 Dynamic Range for Image Sensor……………………………12 2.2 Prior Approaches to Increase Dynamic Range……………13 2.2.1 Well Capacity Adjusting……………………………13 2.2.2 Conditional Reset……………………………………14 2.2.3 Logarithmic Image Sensor……………………………15 2.2.4 New Sensing Device With Dark Current Cancellation Operations……………………………16 2.3 Summary……………………………………………………………17 CHAPTER 3 : CELL STRUCTURE AND OPERATION DESIGN……………27 3.1 Photon Sensing Structure and Physics………………27 3.1.1 Photodiode Sensing……………………………………28 3.1.2 Photogate Sensing………………………………………28 3.2 Dynamic Range Extension Operation …………………29 3.3 Test Key Design…………………………………………………30 CHAPTER 4 : MEASUREMENT RESULTS AND DISCUSSIONS……………41 4.1 Sensor Performance………………………………………41 4.1.1 FPN………………………………………………………41 4.1.2 Dark current……………………………………………42 4.1.3 Sensitivity……………………………………………42 4.1.4 Dynamic Range…………………………………………43 4.2 Dynamic Range Extension………………………………44 4.2.1 Pixel Layout Optimization………………………44 4.2.2 Operation Timing Design……………………………45 4.3 Performance Comparison………………………………46 CHAPTER 5 : CONCLUSIONS…………………………………………65 REFERENCES……………………………………………………………66

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