本篇論文主要是藉著電漿輔助式分子磊晶系統（plasma assisted molecular beam epitaxy，PAMBE）在（11 ̅02）r-軸方向藍寶石（r-plane sapphire）基板上成長出品質優良的（112 ̅0）a-軸方向之非極性氮化銦薄膜，並深入地討論不同的緩衝層對非極性氮化銦薄膜的影響且分析其特性。在成長時利用反射式高能量電子繞射系統（reflection high energy electron diffraction，RHEED）做即時的現場監控，以判斷薄膜成長品質。成長後樣品再用掃描式電子束顯微鏡（scanning electron microscope，SEM）及原子力顯微鏡（atomic force microscope，AFM）做表面形貌的掃瞄，分析其粗糙度及形貌。並將使用X-Ray繞射儀確定薄膜的內部結構、特性與結晶品質，且計算出晶格常數，並可推算出基板與薄膜之晶格常數不匹配程度，因而了解兩者之間的應力大小的差異。本論文並以光致激發螢光光譜技術（photoluminescence spectroscopy），分析並確定非極性氮化銦薄膜的發光波段以及其發光機制，進而能夠改變成長條件去成長發光效率更良好的樣品。本論文以霍爾量測（Hall measurement）決定非極性氮化銦薄膜內的載子遷移率及載子濃度，諸多量測結果可確定了我們成長出的非極性氮化銦薄膜具有良好品質。論文內也有討論到利用不同的緩衝層去成長出非極性氮化銦薄膜，並比較其間特性的差異（表面形貌、結構特性、電性等）。在光致激發螢光光譜量測實驗中確定非極性氮化銦薄膜的基本能隙值應位於~ 0.65 eV附近，這個值與以往被認定的值（1.8-2.0 eV）有很大的出入，但與我們之前在c-軸方向成長的氮化銦薄膜的能隙值一致。

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