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| 研究生： |
簡銘萱 Ming-Hsuan Chien |
|---|---|
| 論文名稱： |
探討利用原子層化學氣相沉積法鍍製Al2O3、HfO2之高介電結構薄膜，應用在奈米尺度世代DRAM影響之電性研究 Electrical properties of Al2O3-HfO2 dielectric capacitors using atomic layer deposition in metal-insulator-metal configuration |
| 指導教授： |
吳泰伯
Tai-bor Wu |
| 口試委員: | |
| 學位類別： |
碩士 Master |
| 系所名稱： |
工學院 - 材料科學工程學系 Materials Science and Engineering |
| 論文出版年： | 2007 |
| 畢業學年度： | 95 |
| 語文別： | 中文 |
| 論文頁數： | 100 |
| 中文關鍵詞： | 原子層化學氣相沉積 、高介電薄膜 |
| 外文關鍵詞： | Atomic Layer Deposition, Metal-insulator-metal, DRAM |
| 相關次數： | 點閱：1 下載：0 |
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本實驗以原子層化學氣相沉積法(Atomic layer chemical deposition, or ALCVD)鍍製高介電薄膜，因ALCVD具有極佳的厚度控制能力、均勻覆蓋能力以及低鍍膜溫度等優點，為許多鍍製超薄膜方法中最具吸引力的。在鍍製Al2O3和HfO2時採用TMA (Trimethylaluminum)作為Al的先趨物，TEMAH (tTetrakis(ethylme))作為Hf的先趨物，兩者皆以H2O作為氧化劑。
本實驗使用MIM(Metal-Insulator-Metal)電容結構，以避免MIS (Metal-Insulator-Silicon)結構於介面形成SiO2而降低電容值的問題。使用的兩種底電極為經In-situ表面電漿處理過Pt基板及TiN基板，採用Au-Ti為上電極。本實驗研究重點在於利用ALCVD鍍製三種不同薄膜結構:分別為(HfO2/Al2O3)*3、HfAlOX及純HfO2結構薄膜，當中HfO2與Al2O3的成分比皆為2:1，薄膜厚度為7.2nm。探討不同結構薄膜電容以及熱處理溫度對電性的影響與研究。
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