在本研究中將提出一個全新的內嵌式非揮發性一次性寫入記憶體架構，本架構具有以下四個優點：第一：不需額外的製程及光罩，第二：高元件密度，第三：容易縮小，第四：低功率消耗。此內嵌式非揮發性一次性寫入記憶體為一N型的記憶體元件，利用保護層(Spacer)中的氮化層，作為儲存層，因此不須任何的額外製程及光罩，本元件利用汲極寫入(Source Side Injection)作為寫入的機制，可較有效率的將熱電子注入儲存層中。同時利用二維的製程及電性模擬軟體來分析元件的基本特性，以此驗證本元件的可行性。經實驗證明，本架構已可在90nm、0.13□m的邏輯製程中實現出來，且相對於傳統的內嵌式非揮發性一次性寫入記憶體在製作成本及元件縮小性上確實有相當大的改進及優勢。

In this work, a novel embedded non-volatile one-time programmable (OTP) memory is proposed. The four major advantages of the novel structure are as follows. First, the novel structure is fully logic-compatible without extra masks. Second, the novel structure has very high cell density. Third, the structure has high scalability. Fourth, the power consumption of the novel structure is very low. The novel structure is an n-type memory cell which uses the nitride layer of the spacer as the storage layer. Therefore, neither additional mask nor process is needed for the novel structure. The programming mechanism is source side injection, which can inject charges to the storage layer more efficiently. In this work, the 2-dimension simulation software (tsuprem4) is used to observe the fundamental principle to prove the practicability of the novel structure. The experiment results show that the new structure can be realized in 90nm and 13□m logic CMOS process and compare to traditional one-time programmable memory cells, the novel structure has ascendancy and good improvement on cost and scalability.

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