於此論文中，主要將探討二個針對W頻段通訊系統應用低雜訊放大器之設計、模擬與量測。
在W-band 之無源毫米波(PMMW)頻段，我們提出一個實作在90nm CMOS製程使用 型變壓器和 T 型變壓器技術的94GHz低雜訊法大器(94GHz LNA with and T transformers)，藉由使用型變壓器技術雜訊將會被有效地抑制，同時輸入端的阻抗頻寬也會增加。另外 型變壓器技術被使用以便於減少來自閘極電感之串聯電阻的損耗，提昇了此低雜訊放大器的性能。這個低雜訊放大器完成了15.8dB的功率增益、6.8dB的雜訊指數以及適中的35mW功耗。另一個為了防撞雷達及無源毫米波之W 頻段應用的低雜訊放大器(擁有耦合共振腔的W 頻段低雜訊放大器)也被實作在90nm製程。比較先前研究皆以T型匹配網路設計W頻帶低雜訊放大器，本研究提出耦合共振腔之新型匹配網路提供了寬的負載(loading)以便於得到寬的頻寬。另外， 型變壓器技術被採用以便於改善此低雜訊放大器的整體雜訊性能，並且也在輸出端使用T-coil技術去改善輸出端頻寬。這個低雜訊放大器在45mW的功率消耗下完成了11. 87dB的功率增益、7.1dB的雜訊指數。應該被強調的是此低雜訊放大器展現了從77.5GHz到101.5GHz之高達24GHz 3dB頻寬。另外在此論文中的兩個放大器皆使用了MMIN(最小的雜訊)技術去最佳化兩個電路的特性，並且採用了搭配基底耦合共地面波導匹配網路(GCPW-PGS) 讓兩個電路的信號損失及基底損耗降到最小。

In this thesis, two low-noise amplifiers for W-band (75-110GHz) applications are discussed regarding their design, simulation, and measurement.
For the passive millimeter wave imaging (PMMW) at W-band, we propose a 94GHz LNA with and T transformers implemented in 90-nm CMOS process. By utilizing the  transformer technique, the noise can be effectively suppressed; also, the input matching bandwidth can be enhanced as well. In addition, the T transformer technique is employed to reduce the loss from the series resistor in gate inductor, enhancing the performance of the LNA. The LNA achieves the power gain of 15.8dB, a minimum noise figure of 6.8 dB and moderate power consumption of 35 mW. Another LNA, a W-band LNA with coupled resonators, is also implemented in 90-nm CMOS process for W-band applications such as anti-collision radar and passive imaging. Compared with previous studies, mostly using the T matching network for W-band LNA design, this LNA proposes new coupled resonator matching network to obtain a wide 3dB bandwidth due to the provided wideband loading. Furthermore, the  transformer technique is adopted to improve the overall noise performance of the LNA. The LNA achieves the power gain of 11.87dB, a minimum noise figure of 7.1 dB under a power consumption of 45 mW. It should be emphasized that the LNA obtains a very wide 3dB-bandwidth up to 24 GHz from 77.5GHz to 101.5GHz. In addition, both amplifiers use the minimum noise measure MMIN technique to optimize their performance and adopt grounded-coplanar waveguide (GCPW) structure with PGS for their minimizing signal and substrate loss.

[1] A.Y.-K. Chen, Y. Baeyens, Young-Kai Chen, and Jenshan Lin, “A low-power linear SiGe BiCMOS low-noise amplifier for millimeter-wave active imaging,” IEEE Microw. Wireless Compon. Lett., vol. 20, pp.103-105, 2010.
[2] R. Reuter and Yi Yin, “A 77 GHz (W-band) SiGe LNA with a 6.2 dB noise figure and gain adjustable to 33 dB,” Bipolar/BiCMOS Circuits and Technology Meeting, pp.1-4, 2006.
[3] L. Gilreath, V. Jam, and P. Heydan, “A W-band LNA in 0.18-m SiGe BiCMOS,” 2010 IEEE International Symposium on Circuits and Systems (ISCAS 2010) , pp.753-756, 2010.
[4] M. Fahimnia, M.R. Nezhad-Ahamadi, B. Biglarbeigian, S. Safavi-Naieni, M. Mohammad-Taheri, and Y. Wang, “A 77 GHz low noise amplifier using low-cost 0.13m CMOS technology,” Microsystems and Nanoelectronics Research Conference, pp.73-75, 2009.
[5] L. Yujiri, M. Shoucri, and P. Moffa, “Passive millimeter-wave imaging,” IEEE Microwave Magazine, vol. 4, pp. 39-50, Sep. 2003
[6] L. Gilreath et al., “A 94-GHz Passive imaging receiver using a balanced LNA with embedded Dicke switch,”IEEE RFIC, May 2010, pp. 79–82.
[7] B. Heydari, M. Bohsali, E. Adabi, and A.M. Niknejad, “Millimeter-wave devices and circuit blocks up to 104 GHz in 90 nm CMOS,” IEEE J. Solid-State Circuits, vol. 42, 2007.
[8] Yu-Sian Jiang, Zuo-Min Tsai, Jeng-Han Tsai, Hsien-Te Chen and Huei Wang, “ A 86 to 108 GHz Amplifier in 90 nm CMOS ,“ Microwave and Wireless Components Letters, vol. 18, pp. 124-126, 2008
[9] R. Reuter and Yi Yin, “A SiGe BiCMOS LNA for 94GHz band applications,” Bipolar/BiCMOS Circuits and Technology Meeting, pp.188-191, 2010
[10] J. W. May, and G. M. Rebeiz, “High-performance W-Band SiGe RFICs for passive millimeter-wave imaging,” IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009, pp. 437-440, June 2009
[11] Dan Sandström, Mikko Varonen, Mikko Kärkkäinen, and Kari A. I. Halonen, Member, IEEE, “W-Band CMOS Amplifiers Achieving +10 dBm Saturated Output Power and 7.5 dB NF,” IEEE J. of Solid-State Circuits, vol. 44, NO. 12, December 2009
[12] Berke Cetinoneri, Student Member, IEEE, Yusuf A. Atesal, Student Member, IEEE, Andy Fung, Member, IEEE, and Gabriel M. Rebeiz, Fellow, IEEE, “W-Band Amplifiers With 6-dB Noise Figure andMilliwatt-Level 170–200-GHz Doublers in 45-nm CMOS,” IEEE Trans. Microw. Theory Tech., Vol. 60, No. 3, March 2012.
[13] J. W. May, and G. M. Rebeiz, “A W-Band SiGe 1.5V LNA for Imaging Applications, ” IEEE Radio Frequency Integrated Circuits Symposium, RFIC pp. 241-244, 2008
[14] J. Jin and S. Hsu, “A 40-Gb/s transimpedance amplifier in 0.18-μm CMOS technology,” IEEE J. Solid-State Circuits, vol. 43, no. 6, pp. 1449-1457, June,2008
[15] A. Komijani, A. Natarajan, and A. Hajimiri, “A 24-GHz, +14.5-dBm fully integrated power amplifier in 0.18-m CMOS,” IEEE J. Solid- State Circuits, vol. 40, no. 9, pp. 1901–1908, Sep. 2005
[16] C. P. Yue and S. S. Wong, “On-chip spiral inductors with patterned ground shields for Si-based RF IC’s,” IEEE J. Solid-State Circuits, vol. 33, no. 5, pp. 743-752, May 1998.
[17] W. Cho and S. Hsu, “An ultra-low-power 24 GHz low-noise amplifier using 0.13 m CMOS technology,” IEEE Microw. Wireless Compon. Lett., vol. 20, pp. 681-683, 2010.
[18] A. Bevilacqua and A. M. Niknejad, “An ultrawideband CMOS low-noise amplifier for 3.1–10.6-GHz wireless receivers,” IEEE J. Solid-State Circuits, vol. 39, no. 12, pp. 2259–2268, Dec. 2004.
[19] To-Po Wang and Huei Wang, “A Broadband 4263-GHz Amplifier Using 0.13-μm CMOS Technology,” IEEE MTT-S International Microw. Symp., pp.1779-1782, 2007.
[20] D.K. Shaeffer and T.H. Lee, “A 1.5 V, 1.5 GHz CMOS low noise amplifier,” IEEE J. Solid-State Circuits, vol. 32, pp. 745-759, 1997.
[21] Shekhar, S. Walling, J.S., Allstot, D.J., “Bandwidth extension techniques for CMOS amplifiers,” IEEE J. Solid-State Circuits, vol. 41, pp. 2424-2439, 2006.
[22] A. Meaamar, Chirn Chye Boon, Kiat Seng Yeo, and Manh Anh Do, “A wideband low power low-noise amplifier in CMOS technology,” IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 57, pp.773-782, 2010.
[23] A. Bevilacqua, F. P. Pavan, C. Sandner, A. Gerosa, and A. Neviani, “Transformer-based dual-mode voltage-controlled oscillators,” IEEE Trans. Circuits Syst. II, pp. 293–297, Apr. 2007.
[24] Mohamed El-Nozahi, Student Member, IEEE, Edgar Sánchez-Sinencio, Fellow, IEEE, and Kamran Entesari, Member, IEEE “A Millimeter-Wave (23–32GHz) Wideband BiCMOS Low-Noise Amplifier,” IEEE J. Solid-State Circuits, vol. 45, no. 2, pp.289-299,Feb. 2010
[25] M. A. T. Sanduleanu, G. Zhang, and J. R. Long, “31-34GHz low noise amplifier with on-chip microstrip lines and inter-stage matching in 90-nm baseline CMOS,” in Proc. IEEE RFIC Symposium, pp. 143–145, June 2006.