本篇論文探討氮化矽(SiNx)薄膜中以不同矽含量原子條件分別在MONOS NVM所成現的特性為何，此薄膜成長所須的氣體有別於現今常用成長氣體(pure SiH4 or SiH2Cl2+ NH3 @ High temperature ambient)， 利用稀釋於氬氣(95%)中的Silane(5%)與氮氣(99.9999%)做反應氣體，成長溫度為室溫或300。C，隨著氮氣反應氣體流量的變化，所成長出來的氮化矽(SiNx)薄膜，矽含量也跟著變化。
電性方面探討是以NVM特性為主，如﹕起使電壓，寫入/擦拭效能，資料保存的能力，以及重覆寫入/擦拭的能力。因為所製作出來的閘極ONO厚度偏厚(min. ~ 800Å) ，因此利用FN穿隧效應做為寫入/擦拭的機制。我們發現一些特性: 1.起使電壓隨著氮氣流量增加而增加，這是因為等效閘級氧化層(EOT)隨著氮氣流量增加而增加原故。2.寫入/擦拭的臨界電壓差(□VT)，會隨著氮氣流量上升而減少。3.重覆寫入/擦拭的能力(Endurance)與氮氣流量並無具體關係，這是因為均勻性FN穿隧效應做為寫入/擦拭機制的原故。4. 資料保存的能力會隨著氮氣流量增加而增加。

In this thesis, we studied the characteristics of Si rich silicon nitride/silicon crystal film in MONOS NVM application. We produced Si rich silicon nitride/silicon crystal film by PECVD and the precursor gas are the mixture of silane diluted to a concentration of 5% in argon and nitrogen gas at purity in excess of 99.9999% under room temperature or 300C ambience. We kept the SiH4 precursor gas flow at 40 sccm and changed the N2 precursor gas flow rates for varying the Si content in SiNx thin film.
In electrical characteristics measurement, we measured the initial threshold voltage, program/erase performance, endurance (program/erase cycle), and data retention. Because of the thick ONO stack film (min. ~800 Å), we used the uniform FN tunneling mechanism for program/erase. We found some characteristics are as follows.
1.The initial Vt is increased with raising N2 precursor gas flow rates. This is due to EOT (equipment gate oxide thickness) increased in less Si content of SiNx thin film.
2.The program/erase window (□VT) is increased with reducing N2 precursor gas flow rates.
3.The endurance performance is less sensitivity with N2 precursor gas flow rates. This is due to uniform FN program/erase mechanism.
4.The data retention performance is improved with raising N2 precursor gas flow rates.

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