薄膜電晶體是最早被發明的場效電晶體，原本被期望可以取代真空管應用於電算基中，但是後來被性能更優越的金屬-氧化物-半導體場效電晶體的出現而逐漸被取代，直到新的應用的出現才又受到重視，這個新應用主要是作為液晶顯示面板中畫素的切換開關，尤其是大尺寸的顯示面板當中更顯得重要。
金屬氧化物電晶體具有成本低、製程溫度低、製程簡單、透明度及可撓度高等優點。目前文獻中，氧化鋁鋅大多作為電極的材料，尚未有以氧化鋁鋅為薄膜電晶體之半導體層之研究。
本論文中，使用射頻濺鍍法，成功實現低成本之氧化鋁鋅釔薄膜電晶體。透過不同製程參數，包含半導體層厚度、製程間通氧流量、通道長度以及製程間基板溫度等，針對其對薄膜電晶體的特性影響做一連串探討研究。

The thin-film transistor (TFT) is the first field-effect transistor, and it was expected to substitute for the vacuum tube applied in the computer. But the TFT was replaced gradually by the Metal-oxide-semiconductor field-effect transistor which has superior performance. The TFT was not paid much attention until the appearance of new application, which was the switch of pixels in LCDs, it was important especially LCDs with large size.
The metal-oxide-based TFT has advantages of low cost, low temperature in process, few steps in process, high transparency, and high flexibility. All the aluminum zinc oxide (AZO) reported in the oxide based TFTs literature to date are used as electrode layers. There are no reports available in the literature on AZO based TFTs.
In this thesis, the low cost device of thin film transistors have been fabricated by RF sputtering. We investigate the effect of processing parameters, including channel thickness, processing O2/Ar ratio, channel length,and processing substrate temperature, on the performance of TFTs.

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