通過優化現有的DBR微共振腔以及設計新的基於GMR的共振腔，我們可以使光子與激子之間的耦合強度高於砷化鎵系統中激子的結合能。此時我們稱該系統進入極強耦合區域，產生的上電磁極化子以及下電磁極化子能量都比強耦合情況下來的低。同時我們發現此時下電磁極化子的解離溫度以及飽和密度邊界都變得更大。因此在常溫下的電磁極化子凝聚變得有可能。這為以後基於這種BEC效應的器件例如量子模擬以及電磁極化子鐳射提供了新的平臺。

By optimizing existed distributed feedback reflector (DBR) microcavities (MCs) or designing new guided mode resonance (GMR) microcavities, we can make the coupling strength between photon and exciton larger than the exciton binding energy in GaAs based system. We call this very strong coupling region in which both upper and lower polariton energy are lower than that in the strong coupling case. Also we show that both the dissociation and saturation boundaries of lower polariton (LP) are much extended, which means condensation of exciton-polaritons is possible at room temperature. It opens the gate for new devices that use the BEC effect such as quantum simulation[1] and polariton laser[2].

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