本實驗欲研發中間介質材料氮化銦鋁作為黏結層來整合多種半導體材料，藉此達光電積體整合之目的。使用銦鋁複合靶材濺鍍製備氮化銦鋁薄膜作為晶圓接合的黏結層，並藉由設計銦佔整體鋁靶材面積比例的不同製備出多種不同成分比例的氮化銦鋁薄膜。因為濺鍍機濺鍍參數和水準眾多不易於找出最適合晶圓接合之參數和水準，所以本實驗使用田口品質工程有效率地且有系統性的探討對各項品質特性(氮化銦鋁薄膜成分比例、薄膜粗糙度、薄膜厚度)影響最深遠的參數和水準，最後成功濺鍍出粗糙度低(Rq=0.22nm~0.39nm)且膜厚薄(35.2nm~44.1nm)並經低掠角XRD分析其成分，其成分大約是銦鋁原子比為一的氮化銦鋁薄膜。並且使用此條件的氮化銦鋁薄膜作為同質(矽基板對矽基板)與異質(矽基板對砷化鎵基板、矽基板對氮化鎵基板)材料晶圓接合的黏結層，在氬氣溢流爐管內以退火溫度600℃最低持溫時間二小時可成功接合。並且長時間退火下的氮化銦鋁薄膜品質可能產生變化，導致電阻率上升使電流隨著時間愈長而愈小。

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