非極性氮化銦薄膜之磊晶成長與物性分析｜國立清華大學博碩士論文庫

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研究生：	洪育良 Hong, Yu-Liang
論文名稱：	非極性氮化銦薄膜之磊晶成長與物性分析 Epitaxial Growth and Fundamental Properties of Nonpolar InN Films
指導教授：	果尚志
口試委員:	陳衛國安惠榮張玉明張文豪
學位類別：	博士 Doctor
系所名稱：	理學院 - 物理學系 Department of Physics
論文出版年：	2013
畢業學年度：	101
語文別：	英文
論文頁數：	140
中文關鍵詞：	氮化銦、極化率、光致極化光、殘餘應力
外文關鍵詞：	Indium nitride, polarization, photoluminescence, strain
相關次數：	點閱：3 下載：0
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本論文中分子束磊晶成長方法被應用在三五族氮化物的異質磊晶成長，其中以高品質的非極性氮化銦薄膜之基本物性為主要研究。對於非極性氮化銦薄膜的表面形貌，晶格結構和光學性質提出詳細的分析，說明樣品的高品質結構。目前以wurtzite結構的非極性三五族氮化物來說，由於c軸平躺在in-plane上的緣故，使得薄膜有非等向異性的光學和結構特性。因為氮化銦薄膜和藍寶石基版之間的晶格不匹配和熱膨脹係數差異極大，會有非等向異性的應力產生。在光致發光極化方面，光譜峰值位置和強度取決於wurtzite結構中c軸相對應方位關係。在變溫實驗中，隨著溫度變化會有著相對應的殘餘應力產生，影響氮化銦的電子能帶結構，造成極化率隨溫度的改變。最大極化率發生在低溫下，隨著溫度的增加而逐漸減小。此外，在雙軸的殘餘應力下，造成帶間躍遷中有價帶分裂的情形，影響氮化銦的峰值能量位移與諧振子強度是隨之改變的。最後，利用k‧p近似理論完整地，把應力修改的電子能帶結構之峰值能量位移與諧振子強度隨著溫度變化，可以跟實驗上測量出的光致極化光做詳細的分析與研究。

Contents
摘要
Abstract

Chapter 1 Introduction                                                1
1 Group III-nitride semiconductor                                       1
2 Historical survey of nonpolar III-nitrides growth achievements              7
3 Polarization anisotropy of nonpolar InN                                 9
4 Application of nonpolar InN                                         12
4.1 Intense terahertz emission from a-plane InN surface                  12
4.2 Investigation on −c-InN and a-InN:Mg ﬁeld effect transistors under   Electrolyte gate bias                                          16

Chapter 2 The Systems of Epitaxial Growth and Optical Characterizations: Plasma-assisted Molecular Beam Epitaxy, Photoluminescence Measurement                                            20
1 Introduction                                                      20
2 Plasma-assisted molecular beam epitaxy (PA-MBE)                      21
3 Photoluminescence (PL) spectroscopy                                 24
4 Laboratory cryostat                                                29
5 Synchrotron-radiation x-ray diffraction (SR-XRD)                       30

Chapter 3 Nonpolar III-Nitride Semiconductor Epitaxial Films Grown by Plasma-assisted Molecular beam epitaxy (PA-MBE)             31
1 Introduction                                                      31
2 Nonpolar III-nitride films growth by PA-MBE                           34
3 Crystalline structure and strain properties studied by RHEED and XRD       39
3.1 Structural characterization of nonpolar InN thin film layers by XRD    41
3.2 Morphology                                                 49
3.3 Anisotropic strain XRD                                        53
4 Raman spectra                                                    54
Chapter 4 Structural and optical polarization properties of InN             57
1 Introduction                                                      57
2 Crystal structure of InN                                             60
2.1 Strain and stress                                              61
2.2 Strain state for different growth orientations                       64
2.3 Lattice constants and thermal expansion parameters of various substrates 66
2.4 Measurement of in-plane strain                                  69
3 Modiﬁcation of the band structure due to in-plane strain                   70
3.1 Bir-Pikus approach for k•p perturbation in wurtzite semiconductor      72
3.2 Strain modiﬁed band structure for c-, a-, and m-plane InN            79
4 Polarization anisotropy of nonpolar InN                                96
5 Summary                                                        98

Chapter 5 Polarized photoluminescence from nonpolar InN epitaxial film: Effects of temperature-dependent anisotropic strain          99
1 Introduction                                                      99
2 Preparation and characterization of nonpolar InN                       102
3 Temperature-dependent PL of nonpolar InN                            105
4 Power-dependent PL of nonpolar InN                                111
5 Polarization anisotropy of photoluminescence                          115
6 Temperature-dependent behavior of PL anisotropy                      117
7 Summary                                                       123

Chapter 6 Conclusions                                              124
Reference                                                         127
Publications                                                       139

                                

Reference
Chapter 1
[1-1] F. Bernardini, V. Fiorentini and D. Vanderbilt, Phys. Rev. B 56, R10024 (1997).
[1-2] V. Fiorentini, F. Bernardini, and F. Sala Della, Phys. Rev. B 60, 8849 (1999).
[1-3] B. Monemar and G. Pozina, Prog. Quant. Electron. 24,239 (2000).
[1-4] S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, Appl. Phys. Lett. 69, 4188 (1996).
[1-5] R. Dingle, D. D. Sell, S. E. Stokowski, and M. Ilegems, Phys. Rev. B, Condens. Matter 4, 1211 (1971).
[1-6] H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986).
[1-7] S. Nakamura, Jpn. J. Appl. Phys. 30, L1705 (1991).
[1-8] S. Nakamura, T. Mukai, and M. Senoh, Jpn. J. Appl. Phys. 30, L1998 (1991).
[1-9] S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys. 31, 1258 (1992).
[1-10] S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).
[1-11] S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, Jpn. J. Appl. Phys. 35, L74 (1996).
[1-12] S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, Jpn. J. Appl. Phys. 34, L1332 (1995).
[1-13] S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, Jpn. J. Appl. Phys. 34, L797 (1995).
[1-14] K. P. O'Donnell, R. W. Martin, and P. G. Middleton, Phys. Rev. Lett. 82, 237 (1999)
[1-15] H.-W. Lin, Y.-J. Lu, H.-Y. Chen, H.-M. Lee, and S. Gwo, Appl. Phys. Lett. 97, 073101 (2010).
[1-16] J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaﬀ, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 94, 4457 (2002).
[1-17] F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, R10024 (1997).
[1-18] V. Fiorentini, F. Bernardini, F. Della Sala, A. Di Carlo, and P. Lugli, Phys. Rev. B 60, 8849 (1999).
[1-19] N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, and M. R. Krames, Appl. Phys. Lett. 86, 111101 (2005).
[1-20] K. Okamoto, H. Ohta, S. F. Chichibu, J. Ichihara, and H. Takasu, Jpn. J. Appl. Phys. Part2 46, L187 (2007).
[1-21] T. Koyama, T. Onuma, H. Masui, A. Chakraborty, B. A. Haskell, S. Keller, U. K. Mishra, J. S. Speck, S. Nakamura, S. P. DenBaars, T. Sota, and S. F. Chichibu, Appl. Phys. Lett. 89, 091906 (2006).
[1-22] K. Okamoto, J. Kashiwagi, T. Tanaka, and M. Kubota, Appl. Phys. Lett. 94, 071105 (2009).
[1-23] R. M. Farrell, D. F. Feezell, M. C. Schmidt, D. A. Haeger, K. M. Kelchner, K. Iso, H. Yamada, M. Saito,K. Fujito, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, Jpn. J. Appl. Phys. Part2 46, L761 (2007).
[1-24] J. F. Nye, Physical Properties of Crystals Their Representation by Tensors and Matrices (Oxford University Press, New York, 1985).
[1-25] T. Takeuchi, H. Amano, I. Akasaki, Jpn. J. Appl. Phys. Part 1 39, 413 (2000).
[1-26] M. Sano and M. Aoki, Jpn. J. Appl. Phys. 15, 1943 (1976).
[1-27] P. Waltereit, O. Brandt and K. H. Ploog, Appl. Phys. Lett. 75, 2029 (1999).
[1-28] K. Dovidenko, S. Oktyabrsky and J. Narayan, J. Appl. Phys. 82, 4296 (1997).
[1-29] M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 81, 1201 (2002).
[1-30] T. Sasaki and S. Zembutsu, J. Appl. Phys. 61, 2533(1987).
[1-31] H. M. Ng, Appl. Phys. Lett. 80, 4369(2002).
[1-32] H. Lu, W. J. Schaff, L. Eastman, et al. Appl. Phys. Lett. 83, 1136(2003).
[1-33] C. Q. Chen, V. Adivarahan, J. W. Yang et al., Jpn. J. Appl. Phys. 42, L1039 (2003).
[1-34] A. Chitnis, C. Chen, V. Adivarahan et al., Appl. Phys. Lett. 84, 3663 (2004).
[1-35] B. A. Haskell, T. J. Baker, M. B. McLaurin et al., J. Electron. Mater. 34, 357 (2005).
[1-36] R. Armitage, Q. Yang and E. R. Weber, MRS Internet J. Nitride Semicond. Res. 8, 6 (2003).
[1-37] C. Rivera, J. L. Pau, E. Munoz, O. Brandt, H. T. Grahn, and K. H. Ploog, Appl. Phys. Let. 88, 213507(2006).
[1-38] S. Ghosh, C. Rivera, J. L. Pau, E. Muñoz, O. Brandt, and H. T. Grahn, Appl. Phys. Let. 90, 091110 (2007).
[1-39] R. Goldhahn, P. Schley, A.T. Winzer, M. Rakel, C. Cobet, N. Esser, H. Lu, and W.J. Schaff, J. Crys. Growth, 288, 273 (2006).
[1-40] S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, Phys. Rev. B 65, 075202 (2002)
[1-41] S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, Appl. Phys. Lett. 80, 413(2002).
[1-42] J. Bhattacharyya and S. Ghosh, Phys. Stat. Sol. (a) 204, 439 (2007).
[1-43] J. Bhattacharyya, S. Ghosh, M. R. Gokhale, B. M. Arora, H. Lu, and W. J. Schaﬀ, Appl. Phys. Lett. 89, 151910 (2006).
[1-44] K. Wang, T. Yamaguchi, A. Takeda, T. Kimura, K. Kawashima, T. Araki, and Y. Nanishi, Phys. Stat. Sol. (a) 207, 1356 (2010).
[1-45] B. Liu, R. Zhang, Z. L. Xie, J. Y. Kong, J. Yao, Q. J. Liu, Z. Zhang, D. Y. Fu, X. Q. Xiu, P. Chen, P. Han, Y. Shi, Y. D. Zheng, S. M. Zhou, and G. Edwards, Appl. Phys. Lett. 92, 261906 (2008).
[1-46] C. Rivera, P. Misra, J. L. Pau, E. Muñoz, O. Brandt, H. T. Grahn, and K. H. Ploog, J. Appl. Phys. 101, 053527 (2007).
[1-47] R. Acsazubi, I. Wilke, K. Denniston, H. L. Lu, and W. J. Schaff, Appl. Phys. Lett. 84, 4810 (2004).
[1-48] B. Pradarutti, G. Matthäus, C. Brückner, S. Riehemann, G. Notni, S. Nolti, V. Cimalla, V. Lebedev, O. Ambacher, and A. Tünnermann, Proc. SPIE 6194, 619401 (2006).
[1-49] V. Cimalla, B. Pradarutti, G. Matthäus, C. Brückner, S. Riehemann, G. Notni, S. Nolte, A. Tünnermann, V. Lebedev, and O. Ambacher, Phys. Status Solidi B 244, 1829 (2007).
[1-50] G. D. Chern, E. D. Readinger, H. Shen, M. Wraback, C. S. Gallinat, G. Koblmuller, and J. S. Speck, Appl. Phys. Lett. 89, 141115 (2006).
[1-51] H. Ahn, Y.-P. Ku, Y.-C. Wang, C.-H. Chuang, S. Gwo, and C.-L. Pan, Appl. Phys. Lett. 91, 132108 (2007).
[1-52] D. Segev and C. G. Van de Walle, Europhys. Lett. 76, 305 (2006); C. G. Van de Walle and D. Segev, J. Appl. Phys. 101, 081704 (2007).
[1-53] Y. Cui, Q. Wei, H. Park, and C. M. Lieber, Science 293, 1289 (2001).
[1-54] X. T. Zhou, J. Q. Hu, C. P. Li, D. D. D. Ma, C. S. Lee, and S. T. Lee, Chem. Phys. Lett. 369, 220 (2003).
[1-55] G. Steinhoff, M. Hermann, W. J. Schaff, L. F. Eastman, M. Stutzmann, and M. Eickhoff, Appl. Phys. Lett. 83, 177 (2003).
[1-56] R. Neuberger, G. Müller, O. Ambacher, and M. Stutzmann, Phys. Status Solidi A 185, 85 (2001).
[1-57] Y. Alifragis, A. Georgakilas, G. Konstantinidis, E. Iliopoulos, A. Kostopoulos, and N. A. Chaniotakis, Appl. Phys. Lett. 87, 253507 (2005).
[1-58] T. Kokawa, T. Sato, H. Hasegawa, and T. Hashizume, J. Vac. Sci. Technol. B 24, 1972 (2006).
[1-59] B. S. Kang, F. Ren, M. C. Kang, C. Lofton, W. Tan, S. J. Pearton, A. Dabiran, A. Osinsky, and P. P. Chow, Appl. Phys. Lett. 86, 173502 (2005).
[1-60] B. S. Kang, H. T. Wang, F. Ren, and S. J. Pearton, J. Appl. Phys. 104, 031101 (2008).
[1-61] C.-F. Chen, C.-L. Wu, and S. Gwo, Appl. Phys. Lett. 89, 252109 (2006).
[1-62] Y.-S. Lu, C.-C. Huang, J. A. Yeh, C.-F. Chen, and S. Gwo, Appl. Phys. Lett. 91, 202109 (2007).
[1-63] Y.-S. Lu, C.-L. Ho, J. A. Yeh, H.-W. Lin, and S. Gwo, Appl. Phys. Lett. 92, 212102 (2008).
[1-64] H. Lu, W. J. Schaff, L. F. Eastman, and C. E. Stutz, Appl. Phys. Lett. 82, 1736 (2003).
[1-65] I. Mahboob, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff, Phys. Rev. Lett. 92, 036804 (2004).
[1-66] G. F. Brown, J. W. Ager III, W. Walukiewicz, W. J. Schaff, and J. Wu, Appl. Phys. Lett. 93, 262105 (2008).
Chapter 2
[2-1] S. Perkowitz, Optical Characterization of Semiconductors: Infrared, Raman, and Photoluminescence Spectroscopy (Academic Press /London /c1993).
Chapter 3
[3-1] R. Juza and H. Hahn, Z. Anorg. Alleg. Chem. 239, 282 (1938).
[3-2] T. L. Tansley and C. P. Foley, J. Appl. Phys. 59, 3241 (1986).
[3-3] J. Wu1, W. Walukiewicz, S. X. Li, R. Armitage, J. C. Ho, E. R. Weber, E. E. Haller, Hai Lu, William J. Schaff, A. Barcz, and R. Jakiela, Appl. Phys. Lett. 84, 2805 (2004).
[3-4] V. Yu. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmu¨ller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul, Phys. Status Solidi B 229, R1 (2002).
[3-5] J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002).
[3-6] K. Xu and A. Yoshikawa, Appl. Phys. Lett. 83, 251 (2003).
[3-7] S. Gwo, C.-L. Wu, C.-H. Shen, W.-H. Chang, T. M. Hsu, J.-S. Wang, and J.-T. Hsu, Appl. Phys. Lett. 84, 3765 (2004).
[3-8] C.-L. Wu, J.-C. Wang, M.-H. Chan, T. T. Chen, and S. Gwo, Appl. Phys. Lett. 83, 4530 (2003).
[3-9] C.-L. Wu, C.-H. Shen, H.-W. Lin, H.-M. Lee, and S. Gwo, Appl. Phys. Lett. 87, 241916 (2005).
[3-10] V. Yu. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmüller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul, Phys. Stat. Sol. (b) 229, R1 (2002).
[3-11] V. Yu. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmüller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul, Phys. Stat. Sol. (b) 229, R1 (2002).
[3-12] H. Lu, W. J. Schaff, L. F. Eastman, J. Wu, W. Walukiewicz, V. Cimalla, and O. Ambacher, Appl. Phys. Lett. 83, 1136 (2003).
[3-13] C. J. Sun and M. Razeghi, Appl. Phys. Lett. 63, 973 (1993).
[3-14] T. Paskova, P. P. Paskov, E. Valcheva, V. Darakchieva, J. Birch, A. Kasic, B. Arnaudov, S. Tungasmita, B. Monemar, Phys. Stat. Sol. (a) 201, 2265 (2004).
[3-15] V. E. Henrich, Rep. Prog. Phys. 48, 1481 (1985).
[3-16] T. Lei, K. F. Ludwig and T. D. Moustakas, J. Appl. Phys. 74, 4430 (1993).
[3-17] Y. J. Sun, O. Brandt and K. H. Ploog, J. Vac. Sci. Technol. B 21, 1350 (2003) .
[3-18] M. D. Craven, S. H. Lim, F. Wu, J. S. Speck and S. P. DenBaars, Appl. Phys. Lett. 81, 1201 (2002).
[3-19] T. Y. Liu, A. Trampert, Y. J. Sun, O. Brandt and K. H. Ploog, Philos. Mag. 84, 435(2004).
[3-20] H.Wang, C. Chen, Z. Gong, J. Zhang, M. Gaevski, M. Su, J. Yang and M. A. Khan, Appl. Phys. Lett. 84, 499 (2004).
[3-21] T. Paskova, R. Kroeger, S. Figge, D. Hommel, V. Darakchieva, B. Monemar, E. Preble, A. Hanser, N. M. Williams and M. Tutor, Appl. Phys. Lett. 89, 051914 (2006)
[3-22] M. Marezio, Acta Crystallogr. A 18, 481(1965).
[3-23] M. A. L. Johnson, W. C. Hughes, W. H. Rowland, J. W. Cook, J. F. Schetzina, M. Leonard, H. S. Kong, J. A. Edmond and J. Zavada, J. Cryst. Growth 175, 72 (1997)
[3-24] J. W. Lee, S. J. Pearton, C. R. Abernathy, J. M. Zavada and B. L. H. Chai, J. Electrochem. Soc. 143, L169 (1996).
[3-25] W. A. Doolittle, S. Kang, T. J. Kropewnicki, S. Stock, P. A. Kohl and A. S. Brown, J. Electon. Mater. 27, L58(1998).
[3-26] B. Chai, private communication.
Chapter 4
[4-1] J. Bhattacharyya, S. Ghosh, M. R. Gokhale, B. M. Arora, H. Lu, and W. J. Schaﬀ, Appl. Phys. Lett. 89, 151910 (2006)
[4-2] J. Bhattacharyya and S. Ghosh, Phys. Stat. Sol. (a) 204, 439 (2007).
[4-3] K. Wang, T. Yamaguchi, A. Takeda, T. Kimura, K. Kawashima, T. Araki, and Y. Nanishi, Phys. Stat. Sol. (a) 207, 1356 (2010).
[4-4] S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, Phys. Rev. B 65, 075202 (2002).
[4-5] S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, Appl. Phys. Lett. 80, 413(2002).
[4-6] C. Rivera, P. Misra, J. L. Pau, E. Muñoz, O. Brandt, H. T. Grahn, and K. H. Ploog, J. Appl. Phys. 101, 053527 (2007).
[4-7] B. Liu, R. Zhang, Z. L. Xie, J. Y. Kong, J. Yao, Q. J. Liu, Z. Zhang, D. Y. Fu, X. Q. Xiu, P. Chen, P. Han, Y. Shi, Y. D. Zheng, S. M. Zhou, and G. Edwards, Appl. Phys. Lett. 92, 261906 (2008).
[4-8] E. O. Kane, J. Phys. Chem. Solids 1, 249 (1957).
[4-9] L. C. de Carvalho, A. Schleife, F. Fuchs, and F. Bechstedt, Appl. Phys. Lett. 97, 232101 (2010)
[4-10] G. L. Bir and G. E. Pikus, Symmetry and Strain Induced Effects in Semiconductors (Wiley, New York, 1974).
[4-11] M. Suzuki and T. Uenoyama, Jpn. J. Appl. Phys. Part 1 35, 543 (1996).
[4-12] M. Suzuki and T. Uenoyama, Group III Nitride Semiconductor Compounds (Clarendon, Oxford, 1998).
[4-13] M. Suzuki, T. Uenoyama, and A. Yanase, Phys. Rev. B 52,8132 (1995).
[4-14] S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog. Phys. Rev. B 65, 075202 (2002).
[4-15] P. Carrier and S. H. Wei, J. Appl. Phys. 97, 033703 (2005).
[4-16] I. Vurgaftman and J. R. Meyer, J. Appl. Phys. 94, 3675 (2003).
[4-17] M. Suzuki and T. Uenoyama. Jpn. J. Appl. Phys. 35, 543 (1996).
[4-18] M.Feneberg, J.Däubler, K. Thonke, and R. Sauer, Phys. Rev. B 77, 245207 (2008).
[4-19] N. W. Ashcroft and N. D. Mermin, Solid State Physics (Thomson Brooks/Cole, California, 1976).
[4-20] B. Cockayne and B. Lent, J. Cryst. Growth 54, 546 (1981).
[4-21] N. Teoﬁlov, K. Thonke, R. Sauer, D.G. Ebling, L. Kirste, and K.W. Benz, Diam. Relat. Mater. 10, 1300 (2001).
[4-22] S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10, 1237 (1992).
[4-23] K. Domen, K. Horino, A. Kuramata, and T. Tanahashi, Appl. Phys. Lett. 70, 987 (1997).
[4-24] P. Carrier and S. H. Wei, J. Appl. Phys. 97, 033703 (2005).
Chapter 5
[5-1] F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, R10024 (1997).
[5-2] V. Fiorentini, F. Bernardini, F. Della Sala, A. Di Carlo, and P. Lugli, Phys. Rev. B 60, 8849 (1999).
[5-3] P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, Nature (London) 406, 865 (2000).
[5-4] M. D. Craven, S. H. Lim, F. Wu, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 81, 469 (2002).
[5-5] H. Lu, W. J. Schaff, L. F. Eastman, J. Wu, W. Walukiewicz, V. Cimalla, and O. Ambacher, Appl. Phys. Lett. 83, 1136 (2003).
[5-6] N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, and M. R. Krames, Appl. Phys. Lett. 86, 111101 (2005).
[5-7] T. Koyama, T. Onuma, H. Masui, A. Chakraborty, B. A. Haskell, S. Keller, U. K. Mishra, J. S. Speck, S. Nakamura, S. P. DenBaars, T. Sota, and S. F. Chichibu, Appl. Phys. Lett. 89, 091906 (2006).
[5-8] K. Okamoto, H. Ohta, S. F. Chichibu, J. Ichihara, and H. Takasu, Jpn. J. Appl. Phys. Part 2 46, L187 (2007).
[5-9] M.C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. BenBaars, and S. Nakamura, Jpn. J. Appl. Phys. Part 2 46, L190 (2007).
[5-10] K. Okamoto, J. Kashiwagi, T. Tanaka, and M. Kubota, Appl. Phys. Lett. 94, 071105 (2009).
[5-11] S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, Phys. Rev. B 65, 075202 (2002).
[5-12] S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, Appl. Phys. Lett. 80, 413 (2002).
[5-13] C. Rivera, P. Misra, J. Luis Pau, E. Muñoz, O. Brandt, H. T. Grahn, and K. H. Ploog, J. Appl. Phys. 101, 053527 (2007).
[5-14] B. Liu, R. Zhang, Z. L. Xie, J. Y. Kong, J. Yao, Q. J. Liu, Z. Zhang, D. Y. Fu, X. Q. Xiu, P. Chen, P. Han, Y. Shi, Y. D. Zheng, S. M. Zhou, and G. Edwards, Appl. Phys. Lett. 92, 261906 (2008).
[5-15] J. Bhattacharyya, S. Ghosh, M. R. Gokhale, B. M. Arora, H. Lu, and W. J. Schaﬀ, Appl. Phys. Lett. 89, 151910 (2006).
[5-16] J. Bhattacharyya and S. Ghosh, Phys. Stat. Sol. A 204, 439 (2007).
[5-17] K. Wang, T. Yamaguchi, A. Takeda, T. Kimura, K. Kawashima, T. Araki, and Y. Nanishi, Phys. Stat. Sol. A 207, 1356 (2010).
[5-18] V. Yu. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmüller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul, Phys. Stat. Sol. B 229, R1 (2002).
[5-19] J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002).
[5-20] H. Ahn, Y.-P. Ku, C.-H. Chuang, C.-L. Pan, H.-W. Lin, Y.-L. Hong, and S. Gwo , Appl. Phys. Lett. 92, 102103 (2008).
[5-21] Y.-S. Lu, Y.-H. Chang, Y.-L. Hong, H.-M. Lee, S. Gwo, and J. A. Yeh, Appl. Phys. Lett. 95, 102104 (2009).
[5-22] S. Gwo, C.-L. Wu, C.-H. Shen, W.-H. Chang, T. M. Hsu, J.-S. Wang, and J.-T. Hsu, Appl. Phys. Lett. 84, 3765 (2004).
[5-23] V. Darakchieva, M.-Y. Xie, N. Franco, F. Giuliani, B. Nunes, E. Alves, C. L. Hsiao, L. C. Chen, T. Yamaguchi, Y. Takagi, K. Kawashima, and Y. Nanishi, J. Appl. Phys. 108, 073529 (2010).
[5-24] G. Shikata, S. Hirano, T. Inoue, M. Orihara, Y. Hijikata, H. Yaguchi, and S. Yoshida, Phys. Stat. Sol. C 5, 1808 (2008).
[5-25] C.-L. Hsiao, J.-T. Chen, H.-C. Hsu, Y.-C. Liao, P.-H. Tseng, Y.-T. Chen, Z.-C. Feng, L.-W. Tu, M. M. C. Chou, L.-C. Chen, and K.-H. Chen, J. Appl. Phys. 107, 073502 (2010).
[5-26] J.-H. Jou and L. Hsu, J. Appl. Phys. 69, 1384 (1991).
[5-27] N. W. Ashcroft and N. D. Mermin, Solid State Physics (Brooks/Cole, Cengage Learning, Belmont, 1976), p. 494.
[5-28] K. Wang and R. R. Reeber, Appl. Phys. Lett. 79, 1602 (2001).
[5-29] T. L. Tansley, C. P. Foley, J. Appl. Phys. 59, 3241 (1986).
[5-30] M. Sato, Jpn. J. Appl. Phys. Part 2 36, L658 (1997).
[5-31] C. StampL, C. G. Van de Walle, D. Vogel, P. Kruger, J. Pollmann, Phys. Rev. B 61, R7846 (2000).
[5-32] J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, W. J. Scha1, Phys. Rev. B 66, 201403 (2002).
[5-33] G. Shikata, S. Hirano, T. Inoue, M. Orihara, Y. Hijikata, H. Yaguchi, S. Yoshida, J. Crys. Grow. 301, 517 (2007).
[5-34] Y. Narukawa, Y. Kawakami, and S. Fujita, Phys. Rev. B 55, R1938 (1997).
[5-35] C.-H. Shen, H.-Y. Chen, H.-W. Lin, S. Gwo, A. A. Klochikhin and V. Yu. Davydov, Appl. Phys. Lett. 88, 253104 (2006).
[5-36] H. Lu, W. J. Schaff, L. F. Eastman, and C. E. Stutz, Appl. Phys. Lett. 82, 1736 (2003) .
[5-37] I. Mahboob, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff, Phys. Rev. Lett. 92, 036804 (2004).
[5-38] V. Darakchieva, M. Schubert, T. Hofmann, B. Monemar, Ching-Lien Hsiao, Ting-Wei Liu, Li-Chyong Chen, W. J. Schaff, Y. Takagi, and Y. Nanishi, Appl. Phys. Lett. 95, 202103 (2009).
[5-39] W. M. Linhart, T. D. Veal, P. D. C. King, G. Koblmüller, C. S. Gallinat, J. S. Speck, and C. F. McConville, Appl. Phys. Lett. 97, 112103 (2010).
[5-40] J. Lee, E. S. Koteles, M. O. Vassell, Phys. Rev. B 33, 5512 (1986)
[5-41] Y. H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra, and S. P. DenBaars, Appl. Phys. Lett. 73, 1370 (1998)

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