本研究分為兩部分；首先以化學蝕刻法達到一次擴散製作選擇性射極結構，比較選擇性與否對短路電流和效率的差異。在製作選擇性射極結構使用的等向性蝕刻液混和了氫氟酸、硝酸、醋酸，比例為1：40：200的稀釋溶液。溶液中放入磁石旋轉使溶液混合均勻，避免影響部分區域蝕刻速率，由於蝕刻時間較長、蝕刻速率須精準控制，加入了大量的醋酸緩衝。
磷摻雜的濃度、深度與持溫溫度、持溫時間相關，摻雜的磷原子濃度從基板表面向內遞減，在刮除表面磷摻雜層時以四點探針量測阻值變化推斷蝕刻量，再利用蝕刻時間調整最佳選擇性射極所需的照光區磷摻雜濃度，使用二次離子質譜儀驗證蝕刻前後的表面濃度差。利用可見-紫外光光譜儀和掃描式電子顯微鏡作量測，比較實驗中蝕刻時間對金字塔結構及反射率的關係。實驗結果顯示，以本研究的蝕刻溶液比例做重摻雜層刮除，蝕刻四分鐘內反射率與參考片相比無明顯變化；蝕刻一分五十秒可有效將表面高濃度磷摻雜層刮除，形成選擇性射極的結構。
第二，沉積氫化非晶矽薄膜五奈米於單晶矽基板背表面，進行鈍化表面懸浮鍵的作用。利用拉曼光譜儀檢測燒結前後晶體結構的變化，再以傅立葉紅外光光譜儀和QSSPC量測模擬電極燒結前後矽氫鍵含量和少數載子生命期，以此判斷氫化非晶矽薄膜在高溫短時間製程後的鈍化效果。本研究之非晶矽層，於800℃持溫二十秒的高溫模擬後，晶體結構仍為非晶，但是在經過800℃持溫二十秒的模擬燒結後矽氫鍵含量明顯減少，而少數載子存活周期也下降，使得鈍化效果略微降低，在開路電壓方面的提升稍受影響。

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