鍺覆蓋層對鎳矽化物成長之研究｜國立清華大學博碩士論文庫

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研究生：	吳怜慧 Ling-Hui Wu
論文名稱：	鍺覆蓋層對鎳矽化物成長之研究 Effect of Ge Capped Layers on the Formation of Ni Silicide
指導教授：	蔡哲正 Cho-Jen Tsai
口試委員:
學位類別：	碩士 Master
系所名稱：	工學院 - 材料科學工程學系 Materials Science and Engineering
論文出版年：	2004
畢業學年度：	92
語文別：	英文
論文頁數：	55
中文關鍵詞：	掃描式電子顯微鏡、高分辨電子顯微鏡、能量分析質譜、二次離子質譜儀、超高真空臨場鍍膜系統
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本研究利用高真空鍍膜系統在室溫中先後沈積鎳(Ni)與鍺(Ge)薄膜於(100)矽晶圓上，再於另一壓力約為2×10-6 torr的真空爐中，於攝氏400至800度高溫退火三小時後，利用掃描式電子顯微鏡(SEM)、高分辨電子顯微鏡(HRTEM)、附能量分析質譜儀(EDX)之穿透式電子顯微鏡(TEM)、與二次離子質譜儀（SIMS）來分析實驗結果，以研究鍺覆蓋層對鎳矽化合物生成之影響。
以往的研究實驗，其鍍膜系統與退火系統皆在同一個真空爐中，而本研究所採用的鍍膜及退火實驗則在不同的真空爐中進行。因為本論文在不同的真空爐中先後進行鍍膜及退火，故鎳會暴露在大氣中和氧產生鍵結，研究結果顯示，在鎳上鍍上一層鍺，可以完全避免鎳的氧化，因此鎳才能和矽產生矽化物。
一般而言，幾個鎳原子層於超高真空臨場鍍膜系統中，約450℃下就可以形成NiSi 2相。由於鍺覆蓋層的影響，本研究發現NiSi 2相的形成有相變化延遲的現象：當鍺覆蓋層厚度為5個原子層時，NiSi 2相的生成溫度延遲至500℃；當鍺覆蓋層厚度為20個原子層時，NiSi 2相的生成溫度延遲至580℃。雖然本論文的實驗流程和以往的超高真空臨場鍍膜系統不同，但其所生長的NiSi 2相與矽基板的磊晶關係是相似的。然而，本論文所生成的NiSi 2長條體之長、寬約在400與60奈米等級，其密度約為1.5x108 cm-2，和以往在相似溫度中，於超高真空臨場鍍膜系統所生成的NiSi 2長條體比較起來，尺寸較小且密度較高。
在Ge (5, 10, 15, 20 ML) / Ni (1 ML) / Si (001)系統中，NiSi 2相沿著<110>方向成長，而且和矽基板磊晶於(111)面。故利用此埋有NiSi 2的矽基板可當做週期性晶格常數變化的模板(template)，進而可研究周期性應力場分布之效應。

關鍵詞：掃描式電子顯微鏡、高分辨電子顯微鏡、能量分析質譜儀、二次離子質譜儀、超高真空臨場鍍膜系統

Thin films of Ni (1ML) and Ge (5, 10, 15, 20ML) were deposited on (100) Si substrate in the UHV chamber at room temperature, followed by ex-situ annealing at 400-800℃ for 3 hours in a separate chamber with a base pressure of 2×10-6 torr, and succeeded by characterization of scanning electron microscope (SEM), high resolution transmission electron microscope (HRTEM), transmission electron microscope (TEM) with energy dispersive X-ray spectrometry (EDX), and secondary ion mass spectrometry (SIMS).
Nickel is prevented from oxidation due to the passivation of the Ge capped layer. Therefore, Ni atoms will react with Si substrate to nucleate NiSi 2 in ex-situ experimental procedures. The retardation effect of the Ge capped layer on the formation of NiSi 2 phase was observed. The formation temperature of NiSi 2 phase is 500℃ and 580℃ for the Ge capped layer of 5ML and 20ML, respectively. The crystalographical relation, to the Si substrate, of thus-formed NiSi 2 phase is similar to that obtained from in-situ UHV deposition of a few monolayer of Ni at around 450℃. The size and density of the NiSi 2 facet bars is on the order of 400 nm x 60 nm and 1.5x108 cm-2, respectively, which are much smaller and denser than those obtained by in-situ UHV deposition at comparable temperatures.
In the system of Ge (5, 10, 15, 20 ML) / Ni (1 ML) / Si (100), NiSi 2 phase arranges along <110> direction regularly and has epitaxy with the Si substrate in the (111) planes. The Si substrate including buried NiSi 2 phase is the template with modulating lattice constants. This template can be studied in the periodic distribution of the strain field.

Keywords: scanning electron microscope, high resolution transmission electron microscope, energy dispersive X-ray spectrometry, secondary ion mass spectrometry, in-situ UHV deposition

摘要……………………………………………………………………....I
ABSTRACT...…………………………………………………………...II
TABLE of CONTENTS………………………………….......................III
LIST of FIGURES…………………………………………...................VI
Chapter 1 Introduction…………………..………….……….……1
1Motivation……………………….………………………………………..……..….1
2 Background of Research……………………………………………...…….….....1
2.1 Ge Dots………………………………………………………………….…...1
2.2 Nickel Silicides...……………………………….…………………..….…...2
3 Method and Purpose of Research……………….…….………………………....3
4 Framework of Research…………………………………………...……………...3

Chapter 2 Paper Review……………………………………….…..4
1 Ge/ Si System………………….…………………..……………….……………...4
2 Island Shape Transition...…….……………………..………………….……...…4
2.1 Hut…………………….………………………………………….….............4
2.2 Dome…………………………………………………...……………………5
2.3 Superdome…………………………………………………….……….........6
2.4 Background of Ge Island Size and Shape Evolution………….…….......6
3 Surfactant    6
3.1 Adding Carbon    7
3.2 Adding HCl(g)    7
4 Nickel Silicide    8
4.1 Application    8
4.2 Phase Transformation    8
4.3 Initial Growth of NiSi 2 Epitaxy    8
5 Nickel Disilicide Grown on Si Substrates    9
5.1 NiSi 2 on Si(111)    9
5.2 NiSi 2 on Si(100)    9

Chapter 3 Experimental Procedures……………………...……..11
1 Wafer Cleaning    12
2 The Deposition of the Thin Film    12
3 Annealing    13
4 Sample Preparation for Transmission Electron Microscope Observation    13
4.1 Plan View Specimen Preparation    13
4.2 Cross-Section Specimen Preparation    14
5 Characterization    14
5.1 Scanning Electron Microscope    14
5.2 Transmission Electron Microscope    15
5.3 Secondary Ion Mass Spectrometry    16

Chapter 4 Results and Discussion..……………………………17
1 Ge 5 ML / Ni 1 ML / Si (100)    18
1.1 SEM Observation    18
2 Ge 10 ML / Ni 1 ML / Si (100)    18
2.1 SEM Observation    18
3 Ge 15 ML / Ni 1 ML / Si (100)    18
3.1 SEM Observation    18
3.2 TEM Observation    19
4 Ge 20 ML / Ni 1 ML / Si (100)    19
4.1 SEM Observation    19
4.2 TEM Observation    20
5 Ge 20 ML / Ni 2 ML / Si (100)    21
5.1 SEM Observation    21
5.2 TEM Observation    21
6 NiSi2 Growth    21
6.1 Ni/Si(100)    21
6.2 The Correlation Between a-Ge and the Retardation Effect of the NiSi 2 Phase    21
6.3 Size and Density of NiSi 2 Phase    23
Chapter 5 Conclusions and Future Work……………….…... 26

REFERENCES………………………………………………28

                                

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