以四氯化矽為前驅物、玻璃及n-type (100) silicon為基板，利用射頻能量分解四氯化矽來進行矽薄膜沈積。本研究工作組裝以吹拂方式帶出前驅物的電漿系統，並由X光粉末繞射儀(X-ray diffractometer, XRD)、傅立葉紅外線光譜儀(Fourier transform infrared spectroscopy, FTIR)、拉曼光譜儀(Raman spectroscopy, Raman)、電子能譜儀(Eletron spectroscopy for chemical analysis, ESCA)及掃描式電子顯微鏡(Scanning electron microscopy, SEM)分析實驗所得的低含氧量矽薄膜。
為了能得到低含氧量的矽薄膜，本研究以不同的實驗條件製作矽薄膜並比較不同參數對於矽薄膜沈積的影響。針對氫氣流量而言，本實驗設定的氫氣參數範圍在於15-90 sccm之間，在範圍內氫氣流量越大對於沈積矽薄膜越有幫助，原因在於需要大量的氫氣來分解前驅物的矽氯鍵結，以防氧化矽的產生。氬氣的最佳流量介於10~15 sccm之間，不同於氫氣，氬氣主要扮演電漿輔助的角色，太大或太小對於矽薄膜沈積都是負面影響。另外，本實驗的電源輸出功率從200 W提高至400 W，在沒有加熱器的狀況下，使用較高功率可以對基板提供些微的熱源以利於非晶矽的成長。本實驗工作的結論是：利用射頻電漿輔助化學氣相沈積法成長非晶矽的薄膜，在沒有加熱源的情況下最佳的參數是功率400 W，氬氣流量 10 sccm和氫氣流量 15 sccm。

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