研究生: |
高靖雅 Ching-ya Kao |
---|---|
論文名稱: |
錫/釩、錫-銀/釩、錫/(鎳,釩) 及錫-銀/ (鎳,釩)之界面反應 Interfacial reactions in Sn/V、Sn-Ag/V、Sn/(Ni,V) and Sn-Ag/ (Ni,V) systems |
指導教授: |
陳信文
Sinn-wen Chen |
口試委員: | |
學位類別: |
碩士 Master |
系所名稱: |
工學院 - 化學工程學系 Department of Chemical Engineering |
論文出版年: | 2004 |
畢業學年度: | 92 |
語文別: | 中文 |
論文頁數: | 82 |
中文關鍵詞: | 界面反應 、錫鎳帆系統 |
相關次數: | 點閱:1 下載:0 |
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本研究探討Sn/V、Sn/(Ni,V)及Sn-3.5%Ag/V、Sn-3.5Ag% /(Ni,V)在250°C下之界面反應。多數之無鉛銲料組成主要以Sn為主,而Sn-3.5%Ag又是目前最具潛力之無鉛銲料之一。近年來覆晶技術受到極大的重視,在銲料與UBM多層金屬間之界面反應更顯重要,而(Ni,V)合金則最常被用來作為UBM阻障層,以避免銲料直接與線路反應,造成電子元件通路失效。本研究之討論對於提供材料基礎性質之學術價值外,亦具有在業界應用上之價值。
純Sn與Sn-3.5wt%Ag在對(Ni,V)合金之界面反應結果上,大致相同,微量的Ag並不對界面反應有任何影響。當(Ni,V)合金之V含量在3wt%時,其生成相僅有一層溶有4at%之Ni3Sn4相,結果與Sn/Ni系統相似;當(Ni,V)合金之V含量增加至5wt%及7wt%時,則可觀察到Ni3Sn4與三元之界金屬相;當(Ni,V)合金之V含量增加至12wt%時,僅能觀察到一生成相,組成為Sn-5at%-25at%,其V含量明顯增加,在相圖上無法定義其生成相種類。利用以上之界面反應結果,建構出Sn-Ni-V三元系統之相圖,從Sn/Ni-5wt%V及Sn/Ni-7wt%V系統之生成相組成變動,推測在相圖中有一相三元之單相區。
Sn/V及Sn-3.5%Ag/V之界面反應結果,在低溫下純釩基材對銲料之濕潤性質不甚理想。由部分接著之試樣中發現, 在高溫950°C反應時間1小時,僅生成一V3Sn相。反應溫度在600°C時,只生成V2Sn3相。當反應溫度低至300°C時,則可觀察到V2Sn3及V3Sn相二相生成。
1.H. Gan, W. J. Choi, G. Xu, and K. N. Tu, JOM, vol.54 (6), (2002)
2.楊明芳, ”覆晶封裝技術簡介”, 產業調查與技術 一 三一期, pp. 47-54
3.陳明坤, ”高密度覆晶封裝技術概論”, 表面黏著技術 第三十八期, pp. 34-42
4.H. Ezawa, M. Miyata, H. Inoue, IEEE/CPMT Int´l Electronics Manufacturing Technology Symposium, pp.293-298, 1997
5.P. Elenius, J. Leal, J. Ney, D. Stepniak, S. Yeh, Electronic Components and Technology Conference, pp.260-265, 1999
6.S. Y. Jang and K. W. Paik, Electronic Components and Technology Conference, pp.64-68
7.C. Y. Liu, K. N. Tu, T. T. Sheng, C. H. Tung, D. R. Frear, and P. Elenius, American Institue of Physics, vol87(2), pp.750-754, 2000
8.G. Ghosh, Acta Material, vol.49, pp.2609-2624, 2001
9.K. Zeng, V. Vuorinen, and J. K. Kivilahti, Electronic Components and Technology Conference, 2001
10.S. Y. Jang, J. Wolf, O. Ehrmann, H. Gloor, H. Reichl, K. W. Paik, Electronic Components and Technology Conference, 2001
11.W. J. Choi, E. C. C. Yeh, and K. N. Tu, Electronic Components and Technology Conference, pp.1201-1205, 2002
12.J. D. Wu, P. J. Zheng, K. Lee, C. T. Chiu, and J. J. Lee, Electronic Components and Technology Conference, pp.452-457, 2002
13.S. Y. Jang, J. Wolf, W. S. Kown, and K. W. Paik, Electronic Components and Technology Conference, pp.1213-1220, 2002
14.W. J. Choi, E. C. C. Yeh, and K. N. Tu, American Institue of Physics, vol94(9), 2003
15.J. D. Wu, P. J. Zheng, C. W. Lee, S. C. Hung, and J. J. Lee, IEEE 41st Annual International Reliability Physics Symposium, Dallas, Texas, pp.132-139, 2003
16.S. W. Yoon, Vaidyanathan Kripesh, W. W. Kwan, and L. C. Yong, Electronic Components and Technology Conference, pp.1222-1229, 2003
17.G. A. Rinne, Electronic Components and Technology Conference, pp.240-247, 1997
18.A. Rahn, “The Basics of Soldering”, John Wiely & Sons, New York, pp.1-54, 1993
19.K. N. Tu and R. D. Thompson, Acta Matallurgica, vol. 30(5), pp. 947-952, 1982
20.S. W. Chen, C. M. Chen and W. C. Liu, Journal of Electronic Materials, vol. 27 (11), pp. 1193-1198 , 1998
21.L. H. Su, Y. W. Yen, C. C. Lin, and S. W. Chen, Matallurgical and Materials Transactions B, vol. 28B, pp.927-934, 1997
22.S. Bader, W. Gust, and H. Hieber, Acta Matallurgica, vol. 30(5), pp. 947-952, 1982
23.J. Haimovich, Welding Research Supplement, vol. 68(3), pp.s102-s111, 1989
24.W. J. Tomlinson and H. G. Rhodes, Journal of Materials Science, vol. 22(5), pp. 1769-1772, 1987
25.T. Y. Lee, K. N. Tu, and D. R. Frear, Journal of Applied Physics, vol.90(9), pp. 4502-4508, 2001
26.S. K. Kang and V. Simic, Thin Solid Films, vol. 98(2), pp. 95-100, 1982
27.J. A. Van Beek, S. A. Stolk, and F. J. Jvan Loo, Zeitschrift Fur Meatalkunde, vol. 73(7), pp.439-444, 1982
28.J. Y. Park, C. W. Yang, J. S. Ha, C. U. Kim, E. J. Kwon, S. B. Jung, and C. S. kang, Journal of Electronic Materials, vol. 30(9), pp. 1165-1170, 2001
29.H. M. Lee, W. K. Choi, Journal of Electronic Materials, vol. 28(11), pp. 1251-1255, 1999
30.王朝弘, 國立清華大學化學工程研究所碩士論文, 2002
31.D. R. Frear, J. W. Jang, J. K. Lin, and C. Zhang, Journal of Metals, vol. 53(6), pp. 28-32, 2001
32.羅偉成, 高振宏 , 2002材料年會中國材料科學學會, 2002年年會論文集(光碟) , 電子構裝及材料組。
33.J. B. Clark, Transactions of the Metallurgical Society of AIME, Vol. 227, pp. 1250-1251, (1963).
34.P. Nash and A.Nash, in ”Binary Alloy Phase Diagrams” ed. By T. B. Massalski, ASM international, Materials Park, Ohio, 1990
35.S. K. Kang, R. S. Rai, and S. Purushothaman, Journal of Electronic Materials, vol.25, pp.1113-1120, 1996
36.陳志銘,國立清華大學化學工程研究所博士論文,2002
37.J. F. Smith, O. N. Carlson, and P. G. Nash, Phase Diagrams of Binary Nickel Alloys, pp.361-367
38.J. Smith, Bulletion of Alloy Phase Diagrams, vol.2 (2), 1981
39.D. R. Frear, J. W. Jang, J. K. Lin and C. Zhang, JOM, pp. 28-38, 2001
40.Y. Kariya, Y. Hirata and M. Otsuka, Journal of Electronic Materials, vol. 28, pp.1263-1269, 1999
41.J. C. Berg, “ Wettability ”, Marcel Dekker. Inc., New York, chapter 1, 1993
42.Instruction Manual for SAT-5000, Rhesca Co., LTD, ver.1.12.
43.Rostoker William,“The metallurgy of vanadium”, 1958
44.饒瑞孟,清華大學化工所博士論文預講初稿 (未發表),2003
45.C. M. Chen, S. W. Chen, Acta Materialia, 50, pp.2461 –2469, (2002).
46.C. Y. Huang and S. W. Chen, Journal of Electronic Materials. Vol. 31. No.2., pp. 152-160, (2002).
47.S. Geller, B.T.Matthias and R.Goldstein, J.Am.Chem.Soc., vol.77, pp.1502-1504, 1955
48.許秀鳳,清華大學化工所碩士論文,2003