我們使用商業販售的碳管粉末，利用旋塗(spin-coating)的方式將碳管均勻地散佈(disperse)在以製作完成結構的基板上，藉以完成奈米碳管電晶體。此方式相較於成長的方式，有著快速且製程簡化的優點，將有利於我們的研究。
在此利用SB-CNTFET與S/D Free CNTFET這兩種不同的結構，與三種不同的通道長度，和三種不同的閘極氧化層厚度，來探討未來元件微縮下，所會遭遇到的種種問題，與其改善的方法。利用S/D Free 的方式，我們證實能有效的解決傳統式SB-CNTFET所會帶來的漏電問題，並增進元件之電特性。在此種結構下，我們可使電晶體之DIBL Coefficient (△VTH/△VDS)下降至100mV/V以下；Subthreshold Swing到達256mV/dec，On/Off Ratio到達四個數量級。
奈米碳管電晶體，其驅動電流的大小主要受限於碳管與金屬相接觸之接觸組抗，與蕭特基能障之大小，而其極性的表現，和金屬電極功函數息息相關。為了尋找適合的材料來製作N-type or P-type之奈米碳管電晶體，因此我們共用了Pd，Ti，TiN，Al，Cu，Ni，共六種金屬來作為電晶體之金屬電極，探討金屬功函數對於奈米碳管電晶體電特性的影響。我們發現，利用高功函數的金屬，將利於製作P-type之電晶體，如利用Pd當金屬電極，可使電晶體之On/Off Ratio到達五個數量級；而採用功函數較低之金屬電極，如利用Al來做為金屬電極，將有利於製作N-type之電晶體。

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