三向閘極穿隧電晶體與其非揮發性記憶體之研究

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研究生：	吳盈宏
論文名稱：	三向閘極穿隧電晶體與其非揮發性記憶體之研究 Study of Tri-Gate Tunneling Transistor and Its Flash Memory
指導教授：	吳永俊
口試委員:	林育賢蔡宗鳴
學位類別：	碩士 Master
系所名稱：	原子科學院 - 工程與系統科學系 Department of Engineering and System Science
論文出版年：	2012
畢業學年度：	100
語文別：	英文
論文頁數：	50
中文關鍵詞：	穿隧電晶體、低漏電電流、非揮發性記憶體、低次臨界電流
相關次數：	點閱：2 下載：0
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此篇論文的研究主題為三向閘極穿隧電晶體與其非揮發性記憶體，主要應用於低功率消耗的積體電路。論文中使用P-I-N結構的電晶體與記憶體，主要是利用穿隧機制來形成導通電流，使元件可以經由穿隧電流來達到快速開關的特性；由於使用三向閘極的原因，能夠從多個方向影響主動層的電位分布，進而增加閘極對通道的控制能力，使元件特性更好。綜合以上論述，具三向閘極複晶矽奈米線穿隧電晶體與記憶體為一高效能且具有良好開關特性之元件。

由於元件尺寸的微縮且積體電路元件的密度增加，功率消耗的問題變的非常重要。使元件在OFF的狀態下漏電電流可以減少，如此可以延長元件的使用時間，增加其效能。此P-I-N穿隧電晶體與記憶體是利用穿隧電流來達到元件導通的機制，跟一般常用MOSFET的電流導通機制不同，MOSFET的次臨界斜率(SS)會受到(kT/q)×ln10的限制，而此P-I-N穿隧電晶體與記憶體則不會受到此項限制。所以次臨界斜率(SS)可以低於60mV/decade，可以達到快速開關的特性。
在論文列出此結構的各項指標，以及實驗數據皆顯示出具三向閘極穿隧電晶體與記憶體具有應用於實際產品的高度價值，同時擁有成為下一世代元件的潛力。

Contents
Abstract (Chinese) --------------------------------------------------------------------------------------- i
Abstract (English) --------------------------------------------------------------------------------------iii
Acknowledge ----------------------------------------------------------------------------------------------v
Contents --------------------------------------------------------------------------------------------------vii
Table Captions ------------------------------------------------------------------------------------------ix
Figure Captions ------------------------------------------------------------------------------------------x
Chapter 1  Introduction ------------------------------------------------------------------------------1
1.1 MOSFET Scaling in Semiconductor Industry -----------------------------------------------1
1.2 Conventional MOSFETs and Their Limits -------------------------------------------------- 1
1.3 Device Concepts for Devices with Steep Subthreshold Swing --------------------------- 2
1.4 Motivation ----------------------------------------------------------------------------------------3
1.5 Organization of this thesis --------------------------------------------------------------------- 5
Chapter 2  The Tunnel-FET -------------------------------------------------------------------------9
2.1 Introduction to the Tunnel FET ---------------------------------------------------------------9
2.2 The Band-to-Band Tunneling------------------------------------------------------------------9
2.3 Subthreshold Swing in Tunnel FETs---------------------------------------------------------11
2.4 Operation Mechanisms-------------------------------------------------------------------------11
   2.4.1 Fowler-Nordheim (FN) Tunneling----------------------------------------------------13
2.5 Basic Reliability of Non-Volatile Memory--------------------------------------------------14
2.5.1 Retention----------------------------------------------------------------------------------14
Chapter 3  Device Structure and Fabrication -------------------------------------------------- 23
 
3.1 Device Structure and Fabrication-------------------------------------------------------------23
Chapter 4  Results and Discussions -------------------------------------------------------------- 30
4.1 Id-Vg characteristics----------------------------------------------------------------------------30
4.2 Id-Vd characteristics----------------------------------------------------------------------------31
4.3 Program / Erase characteristics----------------------------------------------------------------31
4.4 Data Retention-----------------------------------------------------------------------------------32
4.5 Various Temperatures--------------------------------------------------------------------------32
Chapter 5  Conclusion ------------------------------------------------------------------------------ 43
Chapter 6  Future work------------------------------------------------------------------------------44
Reference ------------------------------------------------------------------------------------------------ 46
 

                                

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