本論文探討以Ru為底電極製作(Ta2O5)1-X (TiO2)X薄膜電容，其TiO2的添加對於薄膜電容介電常數的影響；還有比較在Si基板和底電極間加入不同阻絕層TaN/Ta、TiN/Ti、TiWN/TiW之薄膜電容在介電常數及漏電流上的差異。
本實驗是以射頻磁控濺鍍系統，在Si基板上鍍製Ru底電極(100nm)後，再以Ta靶或Ta、Ti合金靶通入氧作反應式濺鍍，在Ru上沉積Ta2O5或(Ta2O5)1-X (TiO2)X薄膜(100nm)，最後鍍上W上電極以形成MIM結構的電容；而結晶的介電薄膜則是在750oC氮氣氛下做快速熱退火處理30秒所得。

以Ru為底電極之(Ta2O5)1-X(TiO2)X薄膜，在x約為0.08時，介電常數為最高，未結晶的薄膜約36，結晶但不具(001)晶面優選方向的薄膜約67，具有(001) 晶面優選方向的薄膜可以達到80。

在以Ru/TaN/Ta/Si、Ru/TiN/Ti/Si及Ru/TiWN/TiW/Si為基板的(Ta2O5)1-X(TiO2)X薄膜中，在同樣的條件下，這三種基板間比較，發現介電常數以Ru/TiN/Ti/Si為基板的較高；在漏電流方面則以Ru/TiWN/TiW/Si的較好。

1. Jun Lin , Nakabayasi Masaali , Atsuhiro Tsukune , and Masao Yamada , APPLIED PHYSICS LETTERS , V74 , n16 , p.2370 (1999).
2. R. F. Cava , W. F. Peck Jr & J. J. Krajewski , Nature , V377 , p.215 (1995).
3. J. Y. Gan , Y. C. Chang , and T. B. Wu , Appl. Phys. Lett. 72 (3) , p.332 (1998).
4. Matthew C. Nielsen , Jin-Young Kim , Eugene J. Rymaszewski , Toh-Ming Lu , Atul Kumar , and H. Bakhru , IEEE TRANSACTIONS ON COMPONENTS , PACKAGING , AND MANUFACTURING TECKNOLOGY—PART B , V21 , n3 , p.274(1998).
5. A. Cappellani , J. L. Keddie , N. P. Barradas , S. M. Jackson , Solid-State Electronics 43 , p.1095 (1999).
6. S.EZHILVALAVAN , T. Y. TSENG , JOURNAL OF MATERIALS SCIENCE：MATERIALS IN ELECTRONICS 10 ,p.9 (1999)
7. K. A. Mckinley and N. P. Sander , Thin Solid Films , 290-291 , p.440(1996)
8. Kee-Won Kwon , Chang-Seok Kang , Soon Oh Park , Ho-Kyu Kang , and Sung Tae Ahn , IEEE Transactions on Electron Devices , V43 , n6 , p.919(1996)
9. Hiroshi Shinriki Teruaki Kisu , Shin-Ichirou Kimuram Yasushiro Nishioka , Yoshifumi Kawamoto , and Kiichirou Mukai , IEEE Transactions on Electron Devices , V37 , n9 , p.1939(1990)
10. 陳克恭等 , 電子工業生產技術手冊1 , 電子元件卷
11. Qiang Lu , Donggun Park , Alexander Kalnitsky , Celene Chang , Chia-Cneng Cheng , Sing Pin Tay , Tsu-Jae King , and Chenming Hu , IEEE Electron Device Letters , V19 , n9 , p.341(1998)
12. Aicha A. R. Elshabini-Riad and Fred D. Barlow III , Thin Film Technology Handbook , ch3.
13. S. Seki , T. Unagami , and B. Tsujiyama , Journal of the Electrochemical Society , 130 , p.2505(1983)
14. C.H. An and K. Sugimoto , Journal of the Electrochemical Society , V139 , p.1956(1992)
15. P.-Y. Lesaicherre , S. Yamamichi , K. Takemura , H. Yamaguchi , K. Tokashiki , Y. Miyasaka , M. Yoshida and H. Ono , Integrated Ferroelectrics 11 , p.81(1995)
16. W. Pan and S. B. Desu , J. Vac. Sci & Technol. B12 , p.3208(1994)
17. D. P. Vijay , S. B. Desu and W. Pan , J. Electrochem. Soc. 140 , p.2635(1993)
18. S. Saito and K.Kuramasu , Jpn. J. Appl. Phys. 31 , p.135(1992)
19. Eun-Suck Choi , Jae-Chang Lee , Jun-Sik Hwang and Soon-Gil Yoon , Jpn. J. Appl. Phys. , V38 , p.5317(1999)
20. Young Chul Choi and Byung Soo Lee , Jpn. J. Appl. Phys. , V38 , p.4876(1999)
21. Tomonori Aoyama , Masahiro Kiyotoshi , Soichi Yamazaki and Kazuhiro Eguchi , Jpn. J. Appl. Phys. , V38 , p.2194(1999)
22. Tomonori Aoyama , Atsushi Murakoshi , and Keitaro Ima , Jpn. J. Appl. Phys. , V37 , p.5701(1998)
23. Tomonori Aoyama , Atsushi Murakoshi , Mitsuo Koike , Shiro Takeno , and Keitaro Ima , Jpn. J. Appl. Phys. , V37 , p.L242(1998)
24. C. S. Petersson , J. E. E. Baglin , J. J. Dempsey , F. M. d’Heurle and S. J. La Placa , J. Appl. Phys. 53 , p.4866(1982)
25. N. C. Sterphenson and R. S. Roth , Acta Crystallographica , Sec. B. V27 , p.1037(1971)
26. Atsuo Fuknmoto and Kazutpsho Nowa , Physical Review. B Solid State , V55 , n17 , p.11155(1997)
27. M. SAITOH , T. MORI , and T. TAMURA , IEDM Tech. Dig. p.680(1986)
28. S. Zaima , T. Furuta , and Y.Yasuda , J. Electrochem. Soc. 137 , p.1297(1990)
29. P. A. Murawala , M. Sawai , T. Tatsuta , O. Tsuii , and S. Fujita , Jpn. J. Appl. Phys. 32 , p.368(1993)
30. H. S. Moon , J. S. Lee , S. W. Kan , J. W. Park , J. H. Lee , S. K. Yang , and H. H. Park , J. Mater. Sci. 29 , p.1545(1994)
31. S. O. Kim , J. S. Byun , and H. J. Kim , Thin Solid Films 206 , p.102(1991)
32. K. Yamagishi , Y. Tarui , Jpn. J. Appl. Phys. 25 , p.L306(1986)
33. S. Tanimoto , M. Matasui , M. Aoyagi , K. Kamisako , K. Kuroiwa , Y. Tarui , Jpn. J. Appl. Phys. 30 , p.L330(1991)
34. S. I.Kimura , Y.Nishioka , A. Shintani , and K. Mukai , J. Electrochem. Soc. 130 , p.2414(1983)
35. Y. Nishioka , S, I. Kimura , H.Shinriki , and K. Mukai , Ibid. 134 , p.410(1987)
36. M. Metikos-Hukovic and M. Ceraj-Ceric , Thin Solid Film , 145 , p.139(1986)
37. K. C. Kalra , P. Katyal , and K. C. Singh , Thin Solid Films , 177 ,p.35(1989)
38. G. D. O’Clock Jr , Applied Physics Letters , 19 , p.403(1971)
39. S. W. Park and H.B. Im , Thin Solid Films , 207 , p.258(1992)
40. A. G. Revesz , J. Allison , T. kirkendall , and J. Reynolds , Thin Solid Films , 23 , p.563(1974)
41. J. F. Meng , Brajesh K. Rai , R. S. Katiyar and A. S. Bhalla , J. Phys. Chem. Solids , V58 , n10 , p.1503(1997)
42. R. J. Cava , J. J. Krajewski , W. F. Peck , Jr. ,and G. L. Roberts , J. Appl.Phys. 80 (4) , p.2346(1996)
43. R. J. Cava , W. F. Peck , Jr. , J. J. Krajewski , G. L. Rober , B. P. Barber , H. M. O’Bryan , and P. L. Gammel , Appl. Phys. Lett. 70 (11) , p.1396(1997)
44. R. J. Cava , J. J. Krajewski , J. Appl. Phys. 83(3) , p.1613(1998)
45. Koichi Kishiro , Nobuhiko Inoue , Shih-Chang Chen and Mashimaru , Jpn. J. Appl. Phys. , V37 , p.1336(1998)
46. Ernest M. Levin , Carl R. Robbins , and Howard F. McMurdie , Phase Diagrams for Ceramists , Fig.2403. or J. L. Waring and R. S. Roth , Journal of Research of the National Bureau of Standards , n2 , p.177(1968)
47. Chich Shang Chang , Tai Bor Wu , Wong Cheng Shih , and Lan Lin Chao , Jpn. J. Appl. Phys. V38 , p.6812(1999)
48. B. K. Moon and J. Aoyama , Applied Physics Letters , p.824(1999)
49. Tomonori Aoyama , Soichi Yamazaki , and Keitaro Imai , J. Electrochem. Soc. ,V145 , n8 , p.2961(1998)
50. Jin-Won Kim , Sang-Don Nam , Seung-Hwan Lee , Seok-Jun Won , Wan-Don Kim , Cha-Young Yoo , Young-Wook Park , Sang-In Lee and Moon-Yong Lee , Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials , Tokyo , 1999 , p.162
51. Xin Sun , Elzbieta Kolawa , Jen-Sue Chen , Jason S. Reid , and Marc-A. Nicolet , Thin Solid Films , 236 , p.347(1993)
52. Bhola Mehrotra and Jim Stimmell , Journal of Vacuum Science and Technology B , V5 , n6 , p.1736(1987)
53. Kyung-Hoon Min , Kyu-Chang Chun , and Ki-Bum Kim , Journal of Vacuum Science and Technology B , V14 , n5 , p.3263(1996)
54. N. R. Moody , R. Q. Hwang , S. Venka-Taraman , J.E. Angelo , D. P. Norwood , and W. W. Gerberich , Acta Materialia , V46 , n2 , p.585(1998)
55. R. Westegard , M. Bromark , M. Larsson , P. Hedengvist , and S. Hogmark , Surface and Coatings Technology , 97 , p.779(1997)
56. Q. Y. Zhang , X. X. Mei , D. Z. Yang , F. X. Chen , T. C. Ma , Y. M. Wang , and F. N. Teng , Nuclear Instrument and Methods in Physics Research B , n127-128 , p.664(1997)
57. R. Wolters , 1992 VMIC Conference , p.292
58. J. E. Baker , Thin Solid Films , 69 , p.53(1980)
59. R. S. Nowicki , Gold Bull. , 15 , p.21(1982)
60. Vance Hoffman , Solid State Tech. , p.119(1983)
61. W. De Bosscher , et. al. , 1993 VMIC Conference , p.442
62. Dipankar Pramanik , Vivek jain , VLSI Tech , Inc , p.97(1991)
63. Y. Inoue , et. al. , Journal of Electrochemical Society , V141 , n4 , p.1056(1994)
64. M. E. C. Willesen , A. E. T. Kuiper , A. H. Reader , R. Hokke , and J. C. Barbour , J. Vac. Sci. Technol. B 6 , p.53(1988)
65. K. Kushida-Abdelghafar , M. Hiratani , K. Torii , Y. Fujuki , Integr. Ferroelectr. 13 , p.113(1996)
66. Takaaki Kawahara , Mikio Yamamuka , Junji Tanimura , Masayoshi Tarutani , Takeharu Kuroiwa , Tsuyoshi Horikawa and Kouichi Ono , Jpn. J. Appl. Phys. , V36 , p.5874(1997)
67. 李佩娟，以反應式濺鍍法製作低溫度係數(Ta,Ti)N薄膜電阻與高介電常數(Ta2O5)1-X-(TiO2)X薄膜電容，國立清華大學材料科學工程系碩士論文，p.44(1999)
68. Dieter K. Schroder , Semiconductor Material and Device Characterization , John Wiley & Sons , Inc. , p.1