本實驗是利用非平衡是磁控濺鍍法將奈米晶氮化鈦鋯 (TiZrN) 薄膜鍍著於 (100) 矽晶片上。研究目的是探討氮氣流量由0改變至2.5 sccm對氮化鈦鋯薄膜的結構、成分、性質的影響。實驗結果顯示氮氣流量最主要是影響在薄膜的相、織構、氮對鈦與鋯的比率 (N/(Ti+Zr) ratio)、膜厚、硬度、殘留應力以及電阻率。隨著氮氣流量增加，薄膜會有相的轉化，由TiZr和TiZrN混合相轉為單一的TiZrN相。由XRD的結果可以知道所有TiZrN試片的從優取向皆為 (111) 平面。薄膜氮對鈦與鋯的比率隨著氮流量增加而增加，但會逐漸趨緩。在氮流量由0.4改變至1.0sccm，TiZrN薄膜的硬度和殘留應力會隨著氮流量增加而增加，而TiZrN薄膜的電阻率則是隨著氮氣流量增加而降低。在氮流量大於1.0 sccm後，TiZrN薄膜為穩定單一相的結構，因此所有性質皆不再隨著氮流量增加而有所變化。在氮流量為1.0至2.5 sccm，TiZrN薄膜的硬度和電阻率平均值分別為36 GPa和36.5 µΩ-cm。

Nanocrystalline TiZrN thin films were deposited on Si (001) substrates by unbalanced magnetron sputtering. The objective of the study is to investigate the effect of nitrogen flow rate on the structure and properties of the TiZrN films with nitrogen flow ranging from 0 to 2.5 sccm. The major effects of the nitrogen flow rate were on the phase, texture, N/(Ti+Zr) ratio, thickness, hardness, residual stress, and resistivity of the TiZrN films. The nitrogen content plays an important role in the transition of phase. With the increase in nitrogen flow, the phase changed from TiZr and TiZrN mixing phases to single TiZrN phase. The results of XRD pattern indicated that (111) was the preferred orientation for all TiZrN specimens. The N/(Ti+Zr) ratio of the TiZrN films increased with respect to the nitrogen flow rate, and tended to stabilization as nitrogen flow rate further increased. When nitrogen flow rate increased from 0.4 to 1.0 sccm, the hardness and residual stress of TiZrN thin film increased, whereas the electrical resistivity decreased. All properties of the TiZrN thin films were not varied with nitrogen flow rate was over 1.0 sccm due to the fact that the films contained a stable single phase TiZrN. At high nitrogen flow rate of 1.0 to 2.5 sccm, the average hardness and resistivity of TiZrN thin films was about 36 GPa and 36.5 µΩ-cm, respectively.

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