由於奈米線只有一個維度的自由度，加上尺寸上的效應使得奈米線應用到連接導線上有很大的潛力，因此了解單根奈米線的電性傳輸現象是很重要的議題。在本實驗中先利用熱蒸鍍法成長氧化銦錫奈米線，接著使用各種分析儀器TEM、SEM、XRD、XPS、ICP-OES量測合成的氧化銦錫奈米線的定量和定性分析。之後使用TEM-STM系統和四點電極量測法量測單根氧化銦錫奈米線的電性。
TEM-STM系統可以同時量測單根奈米線的電性又可即時觀測接觸情況，雖然發展不久但已經被用來量測Si、Ge、InAs、ZnO、CdS以及Bi2S3等半導體和半金屬Bi的材料上。然而此系統是一種兩點量測方法，又加上施加微小的電流和電壓，所以接觸電阻對於量測出來的數據有很大的影響，尤其對於量測半導體材料而言影響更鉅。本實驗中氧化銦錫是一種導體材料，因此只要有效的去除接觸電阻的影響就可以快速量測出單根奈米線的電性。所以利用TEM-STM系統量測單根奈米線電性時，一開始使用真空加熱系統來保存試片和金探針，之後當探針與試片接觸後以高起始電壓通過奈米線，以及將電子束幅照聚集在接觸面上，並在接觸面施加壓力等方法減少接觸電阻對整體量測電阻的影響。
經由上述的步驟，我們可以有效的將低接觸電阻經由不同的分析儀器，我們可以確定合成的氧化銦錫奈米線屬於成長方向[100]的單晶。此外氧化銦錫奈米線電阻率從TEM-STM得到的結果和四點電極量測得到的數值都在相同數量級，兩者的結果也與氧化銦錫薄膜相近，顯示成長的氧化銦錫奈米線仍屬於塊材範圍，此外也證明TEM-STM系統對於量測金屬材料有不錯的可靠度，進而提升以TEM-STM系統研究導體奈米線電性傳輸的潛力。

[1]M. H. Hang, Y. Wu, H. Feick, N. Tran, E. Weber, and P. Yang, Advanced Materials, 13, 113(2001)
[2]P. Yang, and C. M. Lieber, Science, 273, 1836(1996)
[3]Z. L. Wang, R. P. Gao, J. L. Gole, and J. D. Stout, Advanced Materials, 12, 1938 (2000)
[4]C. Liang, G. Meng, Y. Lei, F. Phillipp, and L. Zhang, Advnaced Materials, 13,1330 (2001)
[5]Y. Shigesato, S. Takaki, and T. Haranoh, Journal of Applied Physics, 71, 3356 (1992)
[6]T. Maruyama and T. Tago, Applied Physics Letters, 64, 1395(1994)
[7]S. J. Wen, G. Couturier, G. Campet, J. Portier, and J. Claverie, Physics Status Solidi A, 130, 407(1992)
[8]T. Minami, T. Kakumu, Y. Takeda, and S. Takata, Thin Solid Films, 290, 1 (1996)
[9]J. L. Vossen, RCA Review, 132, 289 (1971)
[10]Lata Gupta, Abhai Mansingh and P. K. Srivastava, Thin Solid Films, 176, 33 (1989)
[11]Radhouane Bel Hadj Tahar, Takayuki Ban, Yutaka Ohya, and Tasutaka Takahashi, Journal of Applied Physics, 83, 2631 (1998)
[12]J. C. Manifacier, Thin Solid Films, 90, 297 (1982)
[13]Granqvist C. G. and Hultaker A., Thin Solid Films, 411, 1 (2002)
[14]H. Binczycka, M. Uhrmacher, M. L. Elidrissi-Moubtassim, J.-C. Jumas, and P. Schaaf, Physics Status solidi (b), 242, 1100 (2005)
[15]Francis S. Galasso, “Structure and Properties of Inorganic Solids”, p99 (1970) Oxford, Pergamon Press
[16]Joint Committee on Powder Diffraction Standards (JCPDS), Card no. 06-0416
[17]G. Frank, H. Köstlin, and A. Rabenau, Phys. Stat. sol. (a), 52, 231 (1979)
[18]Dabin Yu, Debao Wang, Weichao Yu, and Yitai Qian, Materials Letters, 58, 84 (2003)
[19]Shu-Guang Chen, Chen-Hui Li, Wei-Hao Xiong, Lang-Ming Liu, and Hui Wang, Materials Letters, 58, 294 (2004)
[20]Shu-Guang Chen, Chen-Hui Li, Wei-Hao Xiong, Lang-Ming Liu, and Hui Wang, Materials Letters, 59, 1342 (2005)
[21]X. S. Peng, G. W. Meng, X. F. Wang, Y. W. Wang, J. Zhang, X. Liu, and L. D. Zhang, Chemistry of Materials, 14, 4490(2002)
[22]Y Q Chen, J Jiang, B Wang, and J G Hou, Journal of Physics D: Applied Physics, 37, 3319(2004)
[23]Seu Yi Li, Chia Ying Lee, Pang Lin, and Tseung Yuen Tseng, Nanotechnology, 16, 451 (2005)
[24]Hideaki Ohnishi, Yukihito Kondo, and Kunio Takayanagi, Letters to Nature, 395, 780 (1998)
[25]A. Bachtold, M. Henny, C. Terrier, C. Strunk, and C. Schönenberger, J.-P. Salvetat, J. –M. Bonard, and L. Forró, Applied Physics Letters, 73, 274 (1998)
[26]J. -F. Lin, J. P. Bird, L. Rotkina, and P. A. Bennett, Applied Phyiscs Letters, 82, 802 (2003)
[27]M. E. Toimil Molares, E. M. Höhberger, Ch. Schaeflein, R. H. Blick, R. Neumann and C. Trautmann, Applied Physics Letters, 82, 2139 (2003)
[28]R Lin, M Bammerlin, OHansen, R R Schlittler, and P Bøggild, Nanotechnology, 15, 1363 (2004)
[29]Yunze Long, Zhaojia Chen, Wenlong Wang, Fenglian Bai, Aizi Jin and Changzhi Gu, Applied Physics Letters, 86, 153102-1 (2005)
[30]John C. H. Spence, Ultramicroscopy, 25, 165 (1988)
[31]Tokushi Kizuka, Kanji Yamada, Shunji Deguchi, Mikio Naruse, and Nobuo Tanaka, Physical Review B, 55, R7398 (1997)
[32]D. Erts, A. Lõhmus, R. Lõhmus, H. Olin, Applied Physics A, S71 (2001)
[33]D. Erts, H. Olin, L. Ryen, E. Olsson, and A. Thölén, Physics Review B, 61, 127251 (2000)
[34]G. Wexler, Proc. Phys. Soc. London, 89, 927 (1966)
[35]D. Erts, J. D. Holmes, D. Lyons, M. A. Morris, H. Olin, E. Olsson, and B. Plyakov, “Properties of Silicon Nanowires Studied by TEM-STM”, (2002) The Forth Nordic-Baltic Workshop
[36]Magnus W. Larsson, L. Reine Wallenberg, Ann I. Persson, and Lars Samuelson, Microscopy and Microanalysis, 10, 41 (2004)
[37]Z. Y. Zhang, X. L. Liang, C. H. Jin, Q. Chen, and L.-M. Peng, Applied Physics Letters, 88, 073102 (2006)
[38]汪建民, ”材料分析”, (1998) 中國材料科學學會
[39]http://www.ns.nthu.edu.tw/~ycsun/main.htm
[40]J. Yamashita, H. Hirayama, Y. Ohshima, K. Takayanagi, Applied Physics Letters, 74, 2450 (1999)
[41]S. M. Sze, “Semiconductor Devices Physics and Technology” (1985) New York :Wiley
[42]John A. Chaney and Pehr E. Pehrsson, Applied Surface Science, 180, 214 (2001)
[43]胡晟民, ”低溫成長氧化銦奈米線及其摻雜錫後之電性量測” , (2003) 清華大學
[44]Peidong Yang, Haoquan Yan, Samuel Mao, Richard Russo, Justin Johnson, Richard Saykally, Nathan Morris, Johnny Pham, Rongrui He and Heon-Jin Choi, Advanced Functional Materials, 12, 323 (2002)
[45]Young-Soon Kim, Young-Chul Park, S. G. Ansari, Byung-Soo Lee, and Hyung-Shik Shin, Thin Solid Films, 426, 124 (2003)
[46]許樹恩 吳泰伯, “X光繞射原理與材料結構分析”, p289, (1993) 國科會精儀中心
[47]B. Vincent Crist,“Handbook of monochromatic XPS spectra”, (2000) New York: Wiley
[48]R. Holm, “Electric Contact”, Springer-Verlag (1967)
[49]I. Ekvall, E. Wahlström, D. Claesson, H. Olin, and E. Olsson, MEas Sci. Technol., 10, 11 (1999)
[50]T. Shimizu, A. Ando, H. Abe, Y. Nakayama, and H. Tokumoto, In Proceedings of nano-7/ecoss-21, Sweden (2002)
[51]Jeong-O Lee, C. Park, Ju-Jin Kim, Jinhee Kim, Long Wan Park, and Kyung-Hwa Yoo, J. Phys. D: Appl. Phys., 33, 1953 (2000)
[52]T. Kizuka, Physical Review Letter, 81, 4448 (1998)
[53]Mike Gedeon, “The importance of Contact Force”, vol. 1 (1999) Tchnical Tidbits
[54]J. M. Ziman, “Electron and Phonons”, p364 (1960), Oxford
[55]Z. Q. Li and J. J. Lin, Journal of Applied Physics, 96, 5918 (2004)