本研究針對Cu(2at%-Mg)/Ta/SiO2/Si系統進行退火與分析，目的在探討銅中摻鎂對擴散障礙層鉭的熱穩定性影響。退火以有預退火400℃的實驗為主，而直接退火實驗作為對照組，溫度範圍由500℃至800℃，退火氛圍在10-1torr下，時間固定在30分鐘。分析儀器主要是利用場發射穿透式電子顯微鏡（FEG-TEM）進行觀察，使用能量散佈光譜儀（EDS）進行成份分析，附加使用四點探針（four-point probe）研究其電性。最後針對其失效機制進行討論。
在400℃退火後，銅膜表面形成氧化鎂，有效防止銅膜與鉭層的氧化，原本的Cu(Mg)/Ta/SiO2/Si系統在退火之後已經變成為MgO/Cu/ Ta/SiO2/Si的結構。因此在預退火400℃的實驗中，試片表面皆已先形成氧化鎂薄膜。後續退火至600℃其結構仍保持完整，而鉭層已轉變成α相。700℃則發生鉭往外擴散的現象，在銅膜表面形成了MgTa2O6化合物，推測其原因為外界的氧無法擴散下來使鉭氧化，而高溫使銅晶界效應明顯而純鉭狀態不穩定，使得鉭有向銅膜表面移動的傾向，與氧化鎂反應形成化合物，而原本的氧化鎂層已無法辨識。800℃時銅膜表面形成連續的MgTa2O6化合物，判斷此化合物也能保持其下層結構不被氧化並連續完整，在高溫下取代了氧化鎂的作用。

在直接退火的實驗中，失效機制與有預退火的實驗相同，原因是氧化鎂的形成速度很快，且是退火氛圍與鉭的氧化行為主宰了整個失效機制，並非氧化鎂的形成，即使氧化鎂是促使鉭往外擴散的原因之一。不過直接退火中因氧化鎂未先形成，使得少量氧擴散下來，在銅鉭界面形成泡狀物，但對整個實驗機制與熱穩定性影響不大。

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