利用大氣RF電漿在PMMA上沉積透明硬質SiOx膜｜國立清華大學博碩士論文庫

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研究生：	卓勇廷 Yong-Ting Jhuo
論文名稱：	利用大氣RF電漿在PMMA上沉積透明硬質SiOx膜 Transparent Hard SiOx Film Deposition on PMMA by Atmospheric Pressure RF Plasma
指導教授：	陳建瑞 Jiann-Ruey Chen
口試委員:
學位類別：	碩士 Master
系所名稱：	工學院 - 材料科學工程學系 Materials Science and Engineering
論文出版年：	2008
畢業學年度：	96
語文別：	中文
論文頁數：	99
中文關鍵詞：	大氣電漿、HMDSN 、SiOx膜、化學氣相沉積
相關次數：	點閱：1 下載：0
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本實驗利用大氣RF電漿鍍出高硬度、透明且平整的SiOx膜在塑膠基材上，使塑膠基材硬度提升，並要求薄膜有高透光性，使其應用光學及顯示器產業上。且在大氣下進行鍍膜，製程上不需抽真空設備，製程溫度不高於PMMA的Tg點(105 ℃)。另外，本實驗將針對SiOx膜性質的影響因子，進行分析及探討，了解彼此之間的關聯性，進而鍍出硬度高、透光性佳且沉積速率快的SiOx膜。研究結果顯示，隨著所施加的電漿功率或氧氣流量增加，能使SiOx膜沉積速率變快且無機性質上升，但電漿功率或氧氣流量超過某臨界值時，會因氣相均質成核的效應明顯而產生大量粉末沉積，進而使可見光穿透率及表面平整度變差。而提升基材溫度能使碳氫基團在SiOx膜含量減少，因此薄膜的無機性質、硬度有明顯的提升，即使只從25 ℃上升到100 ℃。所沉積之SiOx膜性質如下：硬度達5H，平均可見光穿透率在90 %以上，最佳無機組成的O/Si比例在1.76、Ｃ元素在8.08 %，表面粗糙度(Ra)在2~6 nm之間。

第一章 緒論………………………………………………………………1
1-1 前言…………………………………………………………………1
1-1.1 大氣電漿簡介……………………………………………………2
1-1.2 化學氣相沉積SiO2薄膜…………………………………………8
1-2 研究動機與目標……………………………………………………13
第二章 文獻回顧………………………………………………………15
2-1 電漿特性與原理……………………………………………………15
2-1.1 電漿基本特性……………………………………………………15
2-1.2 電漿能量分佈函數………………………………………………21
2-1.3 電漿的化學反應…………………………………………………25
2-2 大氣電漿沉積SiOx膜………………………………………………31
第三章 實驗設備與流程………………………………………………38
3-1     實驗設備…………………………………………………38
3-1.1 大氣電漿設備系統………………………………………………38
3-1.2 ESCA表面分析量測設備…………………………………………40
3-1.3 表面粗糙度量測（AFM）………………………………………43
3-1.4 掃描式電子顯微鏡（SEM）……………………………………46
3-1.5 紫外光-可見光光譜儀(UV-Vis)………………………………48
3-1.6 鉛筆式硬度計測量………………………………………………49
3-2 實驗設計……………………………………………………………50
3-2.1 實驗流程…………………………………………………………50
3-2.2 標準試片製作……………………………………………………50
3-2.3 先驅物單體準備…………………………………………………51
第四章、結果與討論……………………………………………………52
4-1 電漿功率對SiOx膜性質之影響……………………………………52
4-1.1 電漿功率對SiOx膜沉積速率與元素組成之影響………………52
4-1.2 電漿功率對 SiOx膜光穿透率與表面粗糙度之影響…………53
4-1.3 綜合分析與討論…………………………………………………58
4-2 氧氣流量對SiOx膜性質之影響……………………………………59
4-2.1 氧氣流量對SiOx膜沉積速率、元素組成及硬度之影響………59
4-2.2 氧氣流量對 SiOx膜光穿透率與表面粗糙度之影響…………61
4-2.3 綜合分析與討論…………………………………………………64
4-3 HMDSN流量對SiOx膜性質之影響…………………………………65
4-3.1 HMDSN流量對SiOx膜沉積速率、元素組成與硬度之影響……65
4-3.2 HMDSN流量對 SiOx鍵結型態之影響……………………………67
4-3.3 HMDSN流量對 SiOx膜光穿透率與表面粗糙度之影響…………72
4-3.4 綜合分析與討論…………………………………………………72
4-4 基材溫度對SiOx膜性質之影響……………………………………75
4-4.1 基材溫度對SiOx膜沉積速率、元素組成、硬度、光穿透率及表面粗糙度之影響…………………………………………………………75
4-4.2 HMDSN流量對 SiOx鍵結型態之影響……………………………77
4-4.3 綜合分析與討論…………………………………………………81
4-5 電極間距對SiOx膜性質之影響……………………………………82
4-5.1 電極間距對電漿光譜之影響……………………………………82
4-5.2 電漿功率對SiOx膜沉積速率與元素組成之影響………………86
4-5.3 電漿間距對 SiOx膜光穿透率與表面粗糙度之影響…………88
4-5.4 綜合分析與討論…………………………………………………91
第五章、結論……………………………………………………………92
Reference……………………………………………………………….94

                                

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