本論文研究中主要探討鎳鐵合金微帶線的結構共振與鐵磁共振交互作用的效應。對一般的直線型共振腔而言，產生能量耦合的air-gaps之輸入及輸出端在高頻的時候會產生很大的幅射損耗，為了解決上述問題，我們使用T型微帶共振腔，並提出一種新穎的方法來測量磁性材料的飽和磁化強度和磁性薄膜的電磁特性。高頻阻抗匹配方面，我們使用ADS軟體先進行模擬，找尋適合的微帶線參數，再以微影及濺鍍方式製作微帶線；利用網路分析儀HP 8722D對T型微帶共振腔作S參數量測，並且觀察外加磁場對S參數造成的變化。當外加磁場增加時，共振頻率點會先上升再下降；另外，共振頻率也會先往高頻處移動再往低頻處移動。共振頻率點的變化量大約為5~7dB，而頻率的偏移大約 0.3GHz。透過T型微帶共振腔其外加磁場和鐵磁共振頻率的關係，擬合出薄膜的飽和強化磁場Ms約為1.57Tesla;利用微帶線損耗修正公式，計算出導電率為1.4x106 S/m。為了驗證其量測飽和磁化強度及導電率的準確性，配合超導量子干涉磁量儀(SQUID)量測薄膜磁滯曲線，計算出飽合磁化強度約為1.39Tesla，而四點探針量測出薄膜導電率為1.66x106 S/m。這些結果顯示，利用T型微帶共振腔探討磁性薄膜電磁特性，具有便於量測、樣品體積小，及低成本的優點。

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