由於單斜晶系的氧化鎵(β-Ga2O3)為具有高耐熱性、良好的化學穩定性和4.9eV的寬能隙，是n型的半導體材料，其在應用於氣體感測器、透明導電薄膜與新世代的光電元件上是很有潛力的材料。本研究為了要增益其光電特性，藉由化學氣相沉積(CVD)的熱蒸鍍法及金屬蒸氣真空電弧(MeVVA)離子佈植，摻雜特定元素於我們合成出來的純氧化鎵奈米線。
經由CVD的熱蒸鍍法與氣-液-固(VLS)成長機制，我們已經成功合成出高密度且單晶性的氧化鎵奈米線。並且，我們分別改變工作壓力、基材位置及氧氣流量的不同參數，發現均會對奈米線的結構跟性質有很大的影響。
同樣經由CVD的熱蒸鍍法，我們成功合成出摻雜錫的氧化鎵奈米線並且分析其性質。除此之外，我們測試了在蒸鍍源加入不同比例的錫量對最後摻雜錫濃度的影響。而摻雜錫前後的奈米線性質，在陰極射線激發螢光(CL)分析上，純氧化鎵奈米線原有的415 nm波長peak，在摻雜錫後，藍位移到407 nm波長peak。在電性量測上，摻雜後的電流值，從未摻雜前的10-2提升到10-1微安培，並且電性趨向於導體的歐姆接觸。
另外，我們利用MeVVA離子佈植把銅摻雜於預先合成的純氧化鎵奈米線。銅的摻雜濃度0.23至1.79 at% ，隨著佈植劑量5×1015至5×1016 atom/cm2增多而增加。隨著越高的銅摻雜濃度，原來純氧化鎵奈米線在CL 光譜中415 nm波長的peak，紅位移到更長的波長位置，在最高銅摻雜濃度(1.79 at%)時，peak位在520 nm上。在電性量測上，摻雜後的電流值，從未摻雜前的10-2大幅提升到10微安培，並且電性趨向於導體的歐姆接觸。

Monoclinic gallium oxide (β-Ga2O3), due to its high thermal stability, good chemical stability, and a wide band gap of 4.9 eV, is a n-type semiconductor material for application as gas sensors, a transparent conducting oxide material and perhaps the next generation optoelectronic devices. In this work, to enhance its optoelectronic property, the thermal evaporation in a chemical vapor deposition (CVD) process and metal vapor vacuum arc (MeVVA) ion implantation, were applied to dope the specific elements to the Ga2O3 nanowires.
Tin-doped gallium oxide (Sn-doped Ga2O3) nanostructures were also synthesized by the thermal evaporation in a CVD process and characterized. Different mixing ratio of the Sn dopant was tested to analyze the effect of doping Sn. Cathodoluminescene(CL) showed The pure Ga2O3 nanowires gave an emission 415 nm but showed a blue shift to 407 nm for the emission peak of the Sn-doped Ga2O3 nanowires. In the electrical measurement, after doping, the current increased from 10-2 to 10-1 μA. And the electrical property has a tendency to become an ohmic contact.
The nanowires were also doped with copper(Cu) by a MeVVA system. The Cu concentration increased from 0.23 at% to 1.79 at% with increasing implant dosages from 5×1015 to 5×1016 atom/cm2. With the higher Cu concentration, we could find that the peak of CL red shifted to the longer wavelength. At the highest Cu concentration(1.79 at%), the emission peak of Cu-doped Ga2O3 nanowires is at 520 nm. In the electrical measurement, after the doping, the current increased sharply from 10-2 to 10 μA and the electrical property has a tendency to be an ohmic contact.

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