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研究生: 黃彥鈞
Huang, Yen-Chun
論文名稱: 液態錫銀銲料與碲基材之界面反應研究
A study of interfacial reaction between molten Sn-Ag solder and Te substrate
指導教授: 廖建能
Liao, Chien-Neng
口試委員:
學位類別: 碩士
Master
系所名稱: 工學院 - 材料科學工程學系
Materials Science and Engineering
論文出版年: 2009
畢業學年度: 97
語文別: 中文
論文頁數: 61
中文關鍵詞: 銲料熱電模組介金屬化合物
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  • 以碲化鉍為基礎的熱電材料具有室溫下最突出的熱電性質,但是當其與銲錫發生反應時將生成SnTe此介金屬化合物,嚴重威脅銲料接點的電性質與機械性質。除了在熱電元件表面鍍鎳作為擴散阻障層之外,改變銲料的成分試圖抑制或是減緩SnTe的生成亦是可行的方法。

    本研究將針對液態錫銀銲料與熱電材料的主元素碲之間的界面反應,探討在相同反應溫度250 ℃之下,不同銀添加量以及不同反應時間對介金屬化合物的厚度和形貌的影響。結果顯示在銲錫中添加超過1 wt.%銀元素,反應界面將生成Ag2Sn3Te5以及Ag3Te2介金屬化合物阻擋液態銲錫與碲基材的直接接觸反應,達到抑制SnTe成長的效果,即使反應時間長達300分鐘,SnTe的厚度維持在11 □m,遠比純錫銲料所生成的570 □m來得少。當錫銀銲料與碲基材一產生接觸便生成Ag3Te2與SnTe,但是Ag3Te2進一步地與銲料中的錫發生反應再生成Ag2Sn3Te5以及SnTe,因此反應初期觀察到SnTe異常增厚、反應後期SnTe的生長受到抑制。

    另外在本實驗中發現,當SnTe相的厚度不再增加時將進行保守場的熟化作用,隨著反應時間增加SnTe與銲料的界面形貌越來越不平整,SnTe顆粒產生明顯粗化現象。藉由俯視的電子顯微影像觀察,計算出SnTe平均顆粒半徑大致隨反應時間的1/3次方增加,與理論推測結果相符。


    Telluride-based thermoelements can react with Sn-contained solders and form SnTe intermetallic compounds that may deteriorate electrical and mechanical properties of soldered junctions. In addition to the diffusion barrier approach, chemical composition of the solder alloys could be adjusted to suppress or decrease the rate of SnTe formation.

    In this study the effects of Ag addition (0.1, 1, 3.5, 5 wt.%) in pure Sn on the interfacial reaction between molten solder and Te substrate is explored. It is found that the thickness of SnTe compound is reduced after soldering reaction when more than 1 wt.% Ag is added into Sn solder. For an identical time of 300 minutes, the SnTe thickness is decreased from 570 □m for a pure Sn and Te reaction to only 11 □m for a Sn-Ag alloy and Te reaction. The suppression of SnTe compound formation is associated with the presence of Ag3Te2 and Ag2Sn3Te5 ternary compounds that are located in between the SnTe compound and the Te substrate. However, the rate at which SnTe initially forms is enhanced as the formation of SnTe originates from two different sources: byproduct of molten solder and Te substrate (Ag3Te2 and SnTe) and excess SnTe when Ag3Te2 further reacts with Sn in the solder (Ag2Sn3Te5 and SnTe).

    When the thickness of SnTe remains essentially constant, SnTe undergoes a conservative ripening, resulting in surface roughening. Based on top-view scanning electron microscopy micrographs, it is calculated that SnTe particles size increase approximately with the cube root of reaction time.

    摘要 I Abstract II 致謝 III 目錄 IV 圖目錄 VI 表目錄 IX 第一章 緒論 1 1.1 前言 1 1.2 熱電材料與熱電效應簡介 1 1.2.1 Seebeck效應 2 1.2.2 Peltier效應 3 1.2.3 Thomson效應 4 1.2.4 熱電模組 4 1.3 熱電模組封裝的要求與考量 5 1.4 銲料簡介 7 1.5 研究動機與目的 9 第二章 文獻回顧 10 2.1 介金屬化合物與相圖 10 2.1.1 銀碲二元相圖與碲化銀成分比例 10 2.2 生長機制 13 2.3 熟化現象(Ripening) 16 2.4 熱電模組的接觸電阻率與介金屬化合物之關係 21 第三章 實驗規劃 23 3.1 實驗設計與流程 23 3.2 介金屬化合物的厚度計算方法 27 3.3 實驗設備與儀器 29 第四章 結果與討論 32 4.1 純錫銲料與碲基材之液固反應 32 4.2 錫銀銲料與碲基材之液固反應 34 4.2.1 反應時間對界面的影響 34 4.2.2 銲料中的銀含量對界面的影響 37 4.3 純錫銲料與介金屬化合物Ag3Te2之液固反應 40 4.3.1 Ag3Te2塊材的熔煉製備 41 4.3.2 反應時間對界面的影響 42 4.3.3 碲化錫之定體積熟化作用 47 4.4 反應機制 54 第五章 結論 57 參考文獻 59

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