氧化鋅薄膜電阻式記憶體之轉換機制研究及元件特性量測

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研究生：	黃棨歆 Huang, Chi-Hsin
論文名稱：	氧化鋅薄膜電阻式記憶體之轉換機制研究及元件特性量測 Investigation of Switching Mechanisms and Device Measurements from a ZnO Thin Film Resistive Switching Memory
指導教授：	闕郁倫 Chueh, Yu-Lun
口試委員:	謝光宇曾俊元
學位類別：	碩士 Master
系所名稱：	工學院 - 材料科學工程學系 Materials Science and Engineering
論文出版年：	2012
畢業學年度：	100
語文別：	英文
論文頁數：	66
中文關鍵詞：	電阻式記憶體、氧化鋅、非揮發性記憶體
相關次數：	點閱：2 下載：0
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本論文提出一種方法在鉑/氧化鋅薄膜/鉑的記憶體元件中將燈絲機制的電阻轉換變換成同質介面機制的電阻轉換，探討這兩種轉換行為其不同的電阻轉換特性與元件表現，薄膜中氧空缺的不對稱性分布在此機制變換中扮演著重要的角色，並嘗試在同質電阻轉換操作下去控制保護電流與抹除電壓去做多重組態記憶體的應用。

The thesis has successfully presented a method of transformation of the filamentary resistive switching into the homogeneous interface resistive switching in a Pt/ZnO thin films/Pt memory device. Two types of switching behaviors, which exhibit different resistive switching characteristics and memory performances, were investigated. It has been found that the asymmetric distribution of oxygen vacancies plays a critical role of the transformation between filamentary and homogeneous resistive switching. In addition, under the homogeneous resistive switching, multistate memory can be demonstrated by controlling different compliance currents and reset voltages.

Contents
摘要    I
Abstract    II
Contents    II
List of figures    VI
List of tables    XI
Chapter 1 Introduction     1
Purpose of study    2
Chapter 2 Literature Review     3
2-1 Resistive switching memory    3
2-1-1 Requirements of ReRAM    4
2-1-1-1 Write operation/Erase operation    4
2-1-1-2 Read operation    4
2-1-1-3 Resistance ratio    5
2-1-1-4 Endurance    5
2-1-1-5 Retention    5
2-2 Classification of resistive switching characteristics    6
2-3 Classification of resistive switching characteristics mechanisms    7
2-3-1 The filamentary mechanism    9
2-3-2 The homogeneous interface mechanism    11
2-4 Defect engineering    13
2-5 Integration of device and potential of scaling    13
2-6 Outlook ReRAM in future    17
Chapter 3 Experimental Section     18
3-1 Device fabrication    18
3-1-1 Fabrication of the Pt/ZnO thin film/Pt device    18
3-1-2 Fabrication of the Pt/ZnO1-x nanorod arrays/ZnO thin film/Pt device    18
3-2 Material analysis    19
3-2-1 X-ray diffractometer (XRD)    19
3-2-2 Scanning electron microscopy (SEM)    19
3-2-3 transmission electron microscope (TEM)    19
3-2-4 X-ray photoelectron spectroscopy (XPS)    19
3-2-5 Contact angle measurement    19
3-3 Eelectrical characterization    20
3-4 Calculation of crossbar lines in read margin for ReRAM devices    21
Chapter 4 Transformation of Filamentary and Homogeneous Resistive Switching for High Performance Resistive Switching Memory with Controllable Multistate    24
4-1 Motivation    24
4-2 Results and discussion    25
4-3 Conclusions    39
Chapter 5 ZnO1-x Nanorod Arrays/ZnO Thin Film Bilayer Structure: From Homojuntion Diode to High Performance Resistive Switching Memory     40
5-1 Motivation    40
5-2 Results and discussion    41
5-3 Conclusions    56
Chapter 6 Summary    57
References    58

                                

Chapter 1
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Chapter 3
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Chapter 4
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Chapter 5
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