具高動態範圍之4T主動式影像感測器元件及操作方式

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研究生：	林哲毅 Che-I Lin
論文名稱：	具高動態範圍之4T主動式影像感測器元件及操作方式 A Four Transistor CMOS Active Pixel Sensor with High Dynamic Range Operation
指導教授：	金雅琴
口試委員:
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 電子工程研究所 Institute of Electronics Engineering
論文出版年：	2004
畢業學年度：	92
語文別：	英文
論文頁數：	50
中文關鍵詞：	主動式影像感測器、動態範圍
外文關鍵詞：	CMOS APS, CMOS imager, CMOS image sensor, dynamic range
相關次數：	點閱：3 下載：0
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查詢本校圖書館目錄查詢臺灣博碩士論文知識加值系統勘誤回報

因為製程便宜，加上跟金氧半的製程有高度的整合性，金氧半電晶體主動式影像感測器在影像感測器領域的發展上已經越來越重要，並且在低階影像感測器應用方面已經有取代CCD的趨勢。目前金氧半電晶體主動式影像感測器所遇到的主要問題有高雜訊、暗電流、低動態範圍。在暗電流方面已經可以由製程的改進來完成，所以動態範圍的提升成為主要的議題。本篇論文提出一個可以操作在高動態範圍的新型主動式影像感測器，並且在新的架構與操作下，輸出方式並不需要經過特別的設計。新型主動式影像感測器元件的架構是在傳統的元件上多加入一顆電晶體。從實驗的結果可以看出，使用一個升壓的電源操作下可以達到高動態範圍，並且改變升壓電源的操作可以設計出不同的輸出曲線。從量測的結果發現，在電路中有電洞升級的現象，利用這一個現象可以做一些類比的影像處理動作。除此之外，我們可以利用電洞的收集來做另外一種高動態範圍的操作，主要有兩個方式。一個是在照光週期中，分別有電子與電洞的收集週期，改變電子與電洞的收集週期可以做不同程度的動態範圍的延伸。另外一個是在照光的週期中，電子與電洞同時收集，這樣的操作有兩個好處，一個是有較大的靈敏度，另外可以改變電洞的收集程度來做不同動態範圍的延伸。

A new CMOS APS using standard CMOS logic technology is proposed to allow high dynamic range operation. The new cell is constructed by incorporating one additional transistor to the conventional three transistor APS. The experimental results demonstrate that extended dynamic range is obtained when operates with a ramped reference voltage source. The cell offers flexible nonlinear transfer characteristics, which can be designed by modifying the operational timing diagram. Furthermore, charge collection on the parasitic capacitor allows for the use of the signal due to hole accumulation. An alternative operation of this cell is also proposed to provide enhanced characteristics in both its sensitivity and dynamic range.

LIST OF CONTENTS

ABSTRACT………………………………………………...………………………..II
ACKNOWLEGEMENT……………………………………….…………………..IV
LIST OF CONTENTS…………………………………….………………………...V
LIST OF FIGURES…………………………………………………………….…..VI
CHAPTER ONE     INTRODUCTION………………………….…………………..1
CHAPTER TWO     RESEARCH OF HIGH DYNAMIC RANGE IMAGE SENSOR……………………………………………………………………………..3
2.1      Characteristics of a High Dynamic Range Sensor…………………………...3
2.2      Review of Prior Approaches…………………………………………………3
    2.2.1    Logarithmic-Mode APS……………………………………………...3
    2.2.2    CMOS APS with Conditional Reset………………………………….3
    2.2.3    Fused Image…………………………………………………………..4
CHAPTER THREE  CELL STRUCTURE AND OPERATION SCHEME…..13
 3.1   Four Transistor APS…………………………………………………………13
 3.2   High Dynamic Range Operations Using a Ramp Voltage…………………..13
 3.3   High Dynamic Range Operations Using Hole Collection…………………...14
CHAPTER FOUR     MEASUREMENT RESULTS AND DISCUSSIONS……....35
 4.1   Test-Key Design and Measurement Setup…………………………….…….35
 4.2   Experimental Results…………………………………………………...……35
    4.2.1  Experimental Results of High Dynamic Range Operations Using a Ramp Voltage…………………………………………………………………………..35
    4.2.2  Experimental Results of High Dynamic Range Operations Using Hole Collection……………………………………………………………………….36
4.3      Performance Comparison…………………………………………………….36
CHAPTER FIVE    CONCLUSIONS…………………………………………..…...48
REFERENCES…………………………………………..………………………….49

                                

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