本論文是研究CMOSMEMS紅外線熱感測器的製作，製作過程包含了(1)機械結構的設計與模擬，(2)創新的感測方式：利用PMOS電晶體操做在次臨界區的通道電阻，作為感測的機制。(3)後製程實驗的操作，以及電路效能與機電整合的量測。在最出模擬的TCR值為-3.3％與最後量測結果相比，相距甚小，其量測值-3.1％也優於過去文獻中所發表的結果。而懸浮結夠的面積大小，與感測電晶體PMOS的長寬比，在設計當初並沒有考量其最佳化的效果，因此此篇論文也只討論其量測與模擬結果，希望這方面的探討在未來可以詳細的去研究探討。另外，此次的設計中表面吸收紅外線熱輻射的懸浮平板，表面為鋁金屬，雖然可增加熱傳導至感應電晶體的區塊，但是其對紅外線熱輻射的反射率不小，假若有整個晶圓可以利用，在製作時就可以先沉積抗反射膜，增加懸浮平板對紅外線熱輻射的吸收。

In this thesis we describe the design and fabrication of a CMOS MEMS Infrared thermal sensor fabricated in a 0.35-□m CMOS process. A PMOS transistor operated in the sub-threshold region is used for the thermal sensing purpose. The pixel size is 70 □m by 70 □m, and the sensing transistor is placed in a released membrane of 50 □m by 50 □m fabricated by successive dry etching steps. For device characterization, a poly-silicon heater is placed in each pixel to provide a temperature change at 0.072□C/mW. The MOS output resistance changes from 108 M□ to 90 M□ for a temperature rise of 6□C, averaging a temperature coefficient of resistance at -3.17%/□C. The measured input-referred noise voltage from the pre-amp is 7 □V/□Hz, equivalent to a noise temperature of 1.3 mK/□Hz.

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