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研究生： 洪嘉黛
論文名稱： CuInGa三元合金濺鍍及硒化製備之CIGS薄膜
Characteristics of CIGS Thin Film Produced by Sputter Deposition and Post-Selenization
指導教授： 吳振名
口試委員: 李奕賢
陳世偉
學位類別： 碩士
Master
系所名稱： 工學院 - 材料科學工程學系
Materials Science and Engineering
論文出版年： 2012
畢業學年度： 100
語文別： 中文
論文頁數： 94
中文關鍵詞： 銅銦鎵硒 、濺鍍 、三元 、硒化
外文關鍵詞： CIGS, sputter, ternary, selenization
相關次數： 點閱：2  下載：0 
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    • CIGS(Copper Indium Gallium Selenide)是以銅銦鎵硒四種元素合成之黃銅礦相(chalcopyrite)半導體化合物Cu(In, Ga)Se2。因具有1.04─1.67 eV的直接能隙及高穩定性成為薄膜太陽能電池吸收層材料的首選之一。
    本實驗主要探討兩個變數，一是濺鍍功率和工作壓力對預製層薄膜有何影響，二是不同的硒化熱處理參數如何改變CIGS薄膜。
    實驗結果顯示，低功率、高工作壓力的濺鍍條件下可以得到較平整的銅銦鎵三元合金薄膜預製層，而這一點在文獻中被提及有利於後續的硒化過程。而以XRF的檢測結果看來，即使鍍製的參數有所差異，薄膜成分變動的範圍很小，濺鍍參數不足以成為控制成分的變因，成分的控制要回歸到靶材的熔煉。
    硒化熱處理的持溫溫度則以攝氏100、250、350，最後到550度的多階段持溫結果最佳，持溫時間則顯示應拉長250℃的持溫時間，其中升溫速率沒有明顯影響。硒化處理的前置準備中，硒蒸鍍的厚度有一最佳值，起始壓力應維持在微負壓。
    KCN處理及元件量測顯示本實驗製備之CIGS薄膜中有Cu2-xSe生成，應減少靶材中銅金屬比例至標準比以下。

    目錄 摘要 I 誌謝 II 目錄 III 圖目錄 V 表目錄 VII 第一章 緒論 1 1-1前言 1 1-2研究動機 1 第二章 文獻回顧 2 2-1 太陽能電池基本原理與重要參數 2 2-2 CIGS基本原子結構與特性 6 2-3 CIGS薄膜太陽能電池之研究發展 9 2-3-1基板 10 2-3-2鉬電極 11 2-3-3 CIGS吸收層 11 2-3-4硫化鎘緩衝層 14 2-4 CIGS薄膜太陽能電池的缺點及發展趨勢 17 第三章 實驗方法與步驟 18 3-1 薄膜製備 20 3-1-1 基板準備 20 3-1-2 以濺鍍法鍍製鉬電極 20 3-1-3 以三元合金靶濺鍍銅銦鎵三元合金預製層 21 3-1-4 以熱蒸鍍法鍍製硒元素層 21 3-1-5 薄膜之硒化熱處理 22 3-2薄膜性質量測與分析 23 3-2-1 X-ray繞射儀(XRD) 23 3-2-2掃描式電子顯微鏡(SEM)及X射線能量散佈分析儀(EDX) 23 3-2-3 X-ray螢光分析儀(XRF) 24 3-2-4 霍爾效應量測系統(Hall Effect Measurement System) 24 3-2-5 飛行時間二次離子質譜儀(TOF-SIMS) 24 第四章 結果與討論 25 4-1濺鍍參數對三元合金預製層的影響 25 4-1-1鍍膜功率 25 4-1-2工作壓力 26 4-1-3成分組成 26 4-1-4 濺鍍參數的選擇 27 4-2硒化熱處理過程所造成之影響 31 4-2-1持溫溫度 31 4-2-2持溫時間 34 4-2-3升溫速率 36 4-2-4起始壓力 39 4-2-5表面處理 40 4-2-6 蒸鍍硒時間的變化 43 4-2-7 硒化熱處理參數之選擇 44 4-3 鉬電極之變化 80 4-4 元件量測 83 第五章 結論 85 第六章 文獻參考 87

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