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研究生: 李家暐
Lee, Chia-Wei
論文名稱: 探討應用於雷射干涉重力波偵測器之以電漿輔助化學氣相沈積法製備於矽懸臂之氮化矽薄膜之材料特性與機械損耗
Study of the material properties and the mechanical loss of the silicon nitride films deposited by PECVD method on silicon cantilever for laser interference gravitational wave detector application
指導教授: 趙煦
口試委員: 李正中
任貽均
徐進成
學位類別: 碩士
Master
系所名稱: 電機資訊學院 - 光電工程研究所
Institute of Photonics Technologies
論文出版年: 2013
畢業學年度: 102
語文別: 中文
論文頁數: 67
中文關鍵詞: 機械損耗矽懸臂氮化矽應力重複夾持誤差
外文關鍵詞: mechanical loss, silicon cantilever, silicon nitride, stress, re-clamping error
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  • 雷射干涉重力波偵測器組織(Laser Interferometer Gravitational-Wave Observatory, LIGO)以建置光學重力波偵測器為主要研究項目,其偵測儀器需要具備以光學損耗、機械損耗皆低的光學薄膜材料來製作共振腔之高反射鏡;機械損耗來源很多,而總體雜訊最低也就是量測系統最靈敏處之頻率範圍大約在100Hz左右,在此範圍內以高反射鏡光學薄膜材料本身之熱擾動造成的雜訊最為嚴重;本實驗室參與LIGO計畫,並以室溫下量測機械損耗之系統利用單晶矽懸臂振動及其衰減時間來量測、計算薄膜之機械損耗,再利用機械損耗換算出薄膜材料熱擾動大小,期望以低熱擾動的薄膜材料來提昇重力波觀測儀的靈敏度。
    本研究分為兩大部分,其一為單晶矽懸臂基板完整製程,包含懸臂尺寸設計、光罩設計、KOH溶液濕蝕刻製程及製作過程所發生之基板缺陷情形、改善方式;
    接著詳述以電漿輔助化學氣相沉積鍍製氮化矽光學薄膜之過程,以不同製程氣體流量所沉積之氮化矽薄膜為研究對象進行材料特性量測,包含個別之化學成分組成分析、光學性質(折射率、消散係數)、機械性質(楊氏係數、薄膜應力),最重要的是探討薄膜應力與機械損耗間的關係。由本實驗室所建置之常溫下量測機械損耗之系統測量氮化矽薄膜之機械損耗大約為10-4數量級,但應力值與機械損耗之關係並不顯著,原因可能為重複夾持誤差的影響,筆者將於第四章敘述重複夾持誤差造成的原因及數據討論,目前以增加量測次數的方式希望解決重複夾持誤差所造成的影響,加強機械損耗量測系統之準確度。


    摘要 I 誌謝 II 目錄 III 圖目錄 V 表目錄 VII 第一章 導論 1-1 引言 1 1-2 研究動機 3 第二章 氮化矽薄膜製程 2-1基板製作流程 6 2-1.1 單晶矽懸臂(silicon cantilever)元件結構介紹 6 2-1.2 單晶矽懸臂(silicon cantilever)製程介紹 9 2-1.3 矽懸臂以氫氧化鉀溶液濕蝕刻過程與疑難排解 13 2-2電漿輔助化學氣相沉積(PECVD)系統及氮化矽薄膜介紹 19 2-2.1 電漿輔助化學氣相沉積(PECVD)系統介紹 19 2-2.2 以電漿輔助化學氣相沉積(PECVD)沉積之氮化矽薄膜介紹 20 2-3氮化矽薄膜鍍製流程與參數設定 23 第三章 不同參數生成下之氮化矽薄膜特性研究 3-1 量測儀器與原理介紹 25 3-1.1 電子能譜化學分析儀(ESCA) 25 3-1.2 橢圓偏光儀(Ellipsometer) 26 3-1.3 奈米壓痕儀(Nano-indenter) 27 3-1.4 場發射穿透式電子顯微鏡(TEM) 33 3-1.5 應力量測系統(Stress Measurement System) 36 3-2 量測結果 38 3-2.1 氮化矽薄膜化學成分分析結果 38 3-2.3 氮化矽薄膜楊氏係數量測結果 40 3-2.4 氮化矽薄膜晶相觀測結果與計算鍍率結果 41 3-2.5 氮化矽薄膜應力量測結果 43 第四章 機械損耗與氮化矽薄膜性質相關性分析 4-1 機械損耗量測原理與系統介紹 45 4-2氮化矽薄膜機械損耗量測結果 48 4-2.1 基板量測 48 4-2.2 基板鍍膜後量測 50 4-2.3 薄膜機械損耗計算與分析 51 4-3氮化矽薄膜應力與機械損耗相關性分析 54 第五章 總表結論與未來展望 5-1 結論 56 5-2 未來展望 58 附錄 59 參考文獻 64

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