研究生: |
楊閔智 Yang-ming Chen |
---|---|
論文名稱: |
溶凝膠法製作SrBi2Ta2O9鐵電薄膜研究 |
指導教授: |
胡塵滌
Dr.Chen-Ti Hu 簡昭欣 Dr.Chien Chao-Hsin |
口試委員: | |
學位類別: |
碩士 Master |
系所名稱: |
工學院 - 材料科學工程學系 Materials Science and Engineering |
論文出版年: | 2001 |
畢業學年度: | 89 |
語文別: | 中文 |
論文頁數: | 118 |
中文關鍵詞: | 鐵電薄膜 、溶凝膠法 、低壓退火 、鉭酸鍶鉍鐵電薄膜 |
外文關鍵詞: | Ferroelectric thin film, sol-gel, low pressure annealing, SrBi2Ta2O9 |
相關次數: | 點閱:1 下載:0 |
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摘要
本實驗主要可分為兩部分:第一部份是使用溶凝膠法,以旋鍍的方式,在具有不同下電極結構的基板上,成長鉭酸鍶鉍鐵電薄膜。並探討製程參數對其結晶行為及電性的影響。將鉭酸鍶鉍薄膜分別沈積在Pt/Ta/SiO2/Si,Pt/Ta/Si3N4/SiO2/Si ,Pt/Ti/SiO2/Si ,Pt/Ti/Si3N4/SiO2/Si基板上。經過750℃ 1min 退火後,發現以Ta作為黏著層的試片,擁有較佳的鐵電特性。
本文第二部分使用低壓退火及過量30%鉍之鉭酸鍶鉍薄膜,試圖降低鉭酸鍶鉍薄膜之結晶溫度。雖然過量30%鉍之鉭酸鍶鉍薄膜擁有較佳的結晶性但卻有較大的漏電流。而低壓退火的方法並不能有效的降低結晶溫度但卻能使薄膜緻密進而降低漏電流的值。
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