在本篇論文中有兩個主題。一個是熱流技術應用在電子束微影製程；另一個是阻劑中的微量金屬雜質對多重厚度閘極氧化層可靠性之影響。
在熱流技術應用於電子束微影製程的部分，我們首先定義出深紫外線阻劑（Shipley UV135）應用在電子束微影的最佳製程條件，諸如曝光劑量29.9~40.8μC/cm2 (for 200nm Trench)，軟烤與曝後烤溫度/時間分別為120℃/60sec與130℃/90sec。其次，UV135的熱流性質也在本實驗中獲得評估，影響熱流的參數為熱流烘烤溫度、烘烤時間以及圖案的排列密度必須大於1：1，熱流後的圖案才不會有變形之虞。最後，UV135的蝕刻性質也獲得驗證。二氧化矽對UV135的蝕刻選擇比最高可達到11.46。並且可以經由熱流製程簡單地，製作出小於60奈米的接觸洞。

在阻劑中的微量金屬雜質對多重厚度閘極氧化層可靠性之影響的部分，我們以回蝕刻（etching back）及再氧化的方式，在單一晶片上製作出多重厚度（5.1nm與4.8nm）的閘極氧化層，以因應將來系統單晶片（System on a Chip）的趨勢。並在阻劑中加入鈣、銅、鐵、鎳與鋅五種微量金屬雜質（1013cm-2與1011cm-2），模擬製程中光阻可能受到的污染並探討其對元件電性的影響。阻劑中的微量金屬濃度若在1017cm-3以下，經過RCA清洗後，殘留在氧化層表面的濃度已在全反射X射線螢光光譜儀（TXRF）的偵測極限以下。即使如此，仍可從崩潰電荷、崩潰電場、歸一化平帶電壓與中間能隙陷阱密度看出，以鋅使元件退化得最嚴重。從中間能隙陷阱密度結果顯示出，來自環境中的鈣金屬比我們添加在阻劑中的鈣金屬影響更鉅。此外，鐵與鎳金屬在N2O氧化層所造成的平帶電壓平移，比在O2氧化層輕微，顯示鐵鎳金屬在N2O氧化層內擴散比較不容易。

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