本篇論文主要利用電熱管預熱方式增加低介電損耗材料對微波的吸收
能力，也利用摻雜吸波材料活性碳或是塗抹石墨的間接加熱方式來處
理壓電材料PZT或非晶矽薄膜，使用電熱管預熱也可以了解微波吸收
在加熱過程中所佔的比重。使用的作用腔體有35GHz Quasi Optical
開放式共振腔與2.45GHz半橢圓單模共振腔。以2.45GHz微波，613℃
、20分鐘燒結處理摻雜活性碳PZT，厚度30um，基板不□鋼，介電常
數為3245@1kHz，介電損耗1.71@1kHz，矯頑電場20.1kV/cm，殘留極
化18.2uC/cm2。50nm非晶矽的退火處理，使用35GHz QO開放式共振腔
，功率65W，加熱時間4秒，搭配石墨的間接加熱，可快速的將非晶矽
轉換為多晶矽。

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