第一部分的實驗，是由不同型式的微帶線共振腔，來量測良好金屬薄膜的電導率，對於頻率及溫度的響應。其中的T型共振腔，由於製作及量測準確度優於直線型及環型共振腔，所以直接為後續高頻損耗量測所採用。由S21的穿透率頻譜結果，可發現鋁薄膜的表面電阻和頻率有二次開根號的正比關係，表面電阻和溫度也是直接的正比相依，正好符合了一般金屬的自由電子模型以及電子和聲子的散射結果。
另外，我們進一步地探討了，不良導體中，正常態和非正常態的鈮金屬膜的電性。 非正常態的鈮薄膜，由於電子傳輸時的侷限效應，其電阻率和溫度呈現負電阻係數的相依關係。另外，由於電子對於某頻率能量的共振吸收特性，將導致鈮金屬膜的電導率和頻率成近似一次線性正比的關係。此實驗方法，可更進一步探討多層金屬膜及超導金屬膜的電磁穿透特性。

第二部分的實驗，則是藉由量測具有良好帶狀磁區的鈷膜和鎳膜的電性，以印證磁區壁對於直流以及高頻訊號的散射，並用來建立自旋電子和磁區壁的碰撞行為。同時，也驗證在RF訊號下，鐵磁共振在超寬頻濾波器的應用。此外，藉由量測元件型式改為T型共振腔，在共振腔的結構共振和材料特性的鐵磁共振同時發生下，可發展出此結構在窄頻濾波器的應用。不僅如此，鐵磁材料的基本性，如磁化率、異向性磁場及鐵磁材料的高頻損耗，也可基於此量測方式精確求出。

最後，藉由改進傳統以來，由光學訊號的反射穿透來量測塊材介電係數的方法。我們自行設計了，以雙介質微波共振腔的方法，將奈米寸尺金屬顆粒和氧化鋁的粉末以一定比例，混合並填入單晶氧化鋁的共振腔內，利用TE011模態共振頻率大小及共振吸收頻譜能量的分析，用以量測奈米尺度下的金屬微顆粒的介電係數。

The frequency and temperature dependence of surface resistance of good conducting films was measured by a microwave microstrip method under various geometrical structures. The T-junction microstrip is superior to ring and strip-line resonators, which yields much accurate results with a simple fabrication process. An analysis of the transmission coefficient S21 spectra of the microstrip made of metallic aluminum films reveals that the surface resistance inherits with a one-half power law dependence on frequencies and a linear dependence on temperatures, which is in congruence with the results derived from the free electron model that only accounts on the electron-phonon interaction for a simple metal.

In addition, we have specifically investigated the electron transport with strong localization effect on the DC temperature-dependent resistivity in the abnormal and normal Nb films. The results indicate a deviation from one-half power law may occur in the abnormal film. This work can be further exploited to measure the conductivity and penetration depth of metals in multilayered structure or of superconducting films.

By exploiting the simplicity of a novel transport measurement on a ferromagnetic striped domain structure in a thin film of cobalt, we report the direct observation of ferromagnetic domain wall scattering. A model is proposed to describe these observations which highlights the crucial role played by electron spin precession in determining the electrical transport properties of magnetic interfaces.

Conventional ferromagnetic resonance for magnetic thin films is found to be co-existed with the transmission resonance of a T-type microwave micro-strip at certain applied magnetic fields. The conductivity, the magnetization, and the magnetic anisotropic field of magnetic films can be evolved eventually from the measured resonance frequency and the quality Q factor of the resonance spectra. This work provides a closely scrutinized method to delineate the magnetic and electric properties of the deposited magnetic films succinctly.

Finally, in a mimic of conventional optical reflection and transmission detection method to measure the dielectric constants of bulk materials, we develop a microwave double dielectric resonator to measure the dielectric constants of nano-metallic powders. The vacuum evaporated metallic nanoparticles are collected and filled inside the inner hole of a sapphire tube by which the resonant frequency and Q factor are measured at the TE011 mode to derive the dielectric constant.

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