本實驗的目的乃是發展較為新型之鐵電材料，觀測其在鐵電微波調諧元件上的應用，其內容為微波元件中最基本的變容器。由於鐵電調諧元件首重電容隨電壓而變的調變力，以及高頻下的介電損失，所以在材料的選擇上，取用與現今被廣泛討論的鈦酸鍶鋇(BST)同系列之鋯鈦酸鋇(BZT)做為材料研發的重點，BZT材料的特性在於比起BST有較小的介電損失，以及不弱的調變力，並且藉由鋯含量的增加，使居里溫度可以降至室溫以下，得到完全之順電相。本實驗配製三種不同鋯含量之Ba-rich靶材，採用射頻磁控濺鍍法濺鍍所需之薄膜。
多篇論文曾提及，利用LNO底電極有助於使同樣為鈣鈦礦結構的鐵電材料在低溫結晶，且具有優選指向，本實驗係利用LNO底電極薄膜來幫助成長較好結晶品質之BZT薄膜。此外，影響調變力與介電損失的因素通常決定於薄膜的品質，其與製程參數的選擇有很大的關係，由實驗中發現，濺鍍功率、鍍膜溫度、以及鍍膜時的氣氛，皆會影響薄膜的物理以及電氣性質，太大或太小的濺鍍功率、太高或太低的鍍膜溫度，太多或太少的氧含量分壓，皆會造成薄膜性質的下降。本實驗最好的參數選擇為當濺鍍功率50W(2-inch靶材)、鍍膜溫度550℃、以及濺鍍氣氛為Ar/O2=75/25時會得到較好的薄膜品質。

不同鋯含量的薄膜，展現出來的性質也不一樣，本實驗亦發現，隨著鋯含量的增加，薄膜展現出之調變力雖有下降之趨勢，但介電損失亦會降低，而材料對於鐵電調諧元件的實用性可由一項優異值來決定，從實驗的結果中，以鋯含量最多者之薄膜得到的優異值最大。

此外，在高頻量測上，本實驗採用的量測模型乃選自Zhengxiang Ma、Andrew J.[40]等人所發展的一套模型，量測此材料在高頻上所展現出的電氣特性，從結果得知，此模型量測的量測的準確範圍約在1GHz以下。

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