摻鉺光纖放大器在增益頻寬方面的進展，已將長波段通訊窗口往後延伸至1625nm左右，這促使1625nm的雷射得以應用在高密度分波多工系統中。常見的應用為光時域反射儀，可提供不中斷服務的單端光纖檢測，有效地偵測潛在的光纖損壞。另一個應用為光監控頻道通訊用雷射光源，用以監視、控制及保護高密度分波多工系統中的每一道通訊波長，使通訊品質維持所需水準。
本論文實際製作AlGaInAs/AlGaInAs、InGaAs/InGaAsP及InGaAsP/InGaAsP三種不同主動區材質的1625nm脊狀雷射，脊狀寬度為3μm。由於波長較長，故脊狀高度較高，在正極金屬連接上易出問題，成長兩層介電質以改善。為瞭解長波長歐傑效應與價帶間吸收對表現的影響，量測不同材質之電流–電壓特性、光–電流特性、光譜特性及溫度特性，藉以完整調查何者適合成為1625nm的主動區材質。
AlGaInAs、InGaAs及InGaAsP三者在腔長300μm，溫度25℃時，所得臨界電流分別為12.7mA、15.5mA及19.6mA，微分量子效率為0.138mW/mA、0.163mW/mA及0.148mW/mA，特徵溫度為44.8K、46.5K及40K，而峰波長在40mA的注入電流下，分別為1670.01nm、1642.64nm及1643.99nm。

[1] Joseph C. Palais著，董德國，陳萬清譯，「光纖通訊」，臺灣東華，臺北市，2000。
[2] Stamatios V. Kartalopoulos著，王崗嶸，陳鴻仁譯，「DWDM技術入門」，全華，臺北市，2002。
[3] H. Takasugi, N. Tomita, J. Nakano, N. Atobe, “Design of a 1.65-μm-band optical time-domain reflectometer,” Journal of Lightwave Technology, vol. 11, pp. 1742-1748, 1993.
[4] T. Munakata, Y. Kashima, S. Kusumoto, A.Matoba, H. Takano, “High-power 1.625-μm strained multiple-quantum-well lasers as a light source for optical time-domain reflectometers,” Optical and Quantum Electronics, vol. 28, pp.495-502, 1996.
[5] T. Munakata, Y. Kashima, A. Matoba, “1.625-μm high-power strained multiple quantum well lasers for optical time-domain reflectometers,” Optical Review, vol. 4, pp.72-42, 1997.
[6] Y. Kahima, T. Nozawa, T. Munakata, “Metalorganic vapor-phase epitaxy (MOVPE) growth of InGaAsP multiple-quantum-well distributed feedback lasers on InP corrugated substrate, ” Journal of Crystal Growth, vol. 204, pp.429-433, 1999.
[7] M. Reunert, “Find fiber faults without interrupting service,” Photonics Spectra, vol. 35, pp. 173-176, 2001.
[8] Fukuda, Mitsuo., “Optical Semiconductor Devices,” Wiley, New York, 1999.
[9] Govind P. Agrawal, Niloy K. Dutta., “Semiconductor Lasers,” 2nd ed., Van Nostrand Reinhold, New York, 1993.
[10] D. P. Bour, R. U. Martinelli, R. E. Enstrom, et al., “1.5＜λ＜1.7μm multiquantum well InGaAs/InGaAsP diode lasers,” Electronics Letters, vol.28, pp.37-39, 1992.
[11] M. Davies, M. Dion, D. C. Houghton, J. Z. Sedivy, et al., “Long –wavelength high-efficiency low-threshold InGaAsP/InP MQW lasers with compressive strain,” Electronics Letters, vol.28, pp2004-2005, 1992.
[12] Peter J. A. Thijs, Luuk F. Tiemeijer, J. J. M. Binsma, Teus van Dongen, “Progress in Long-Wavelength Strained-Layer InGaAs(P) Quantum- Well Semiconductor Lasers and Amplifiers,” IEEE Journal of Qunatum Electronics, vol. 30, pp. 477-499, 1994.
[13] M Gudeny, J Piprek, “Material parameters of quaternary III–V semiconductors for multilayer mirrors at 1.55 -μm wavelength,” Modelling Simul. Mater. Sci. Eng., vol. 4 , pp.349–357, 1996.
[14] Joachim Piprek, J. Kenton White, Anthony J. SpringThorpe, “What Limits the Maximum Output Power of Long-Wavelength AlGaInAs/InP Laser Diodes?”, IEEE Journal of Quantum Electronics, vol. 38, pp. 1253-1259, 2002.
[15] Chung-En Zah, Rajaram Bhat, Bhadresh N. Pathak, et al., “High-performance uncooled 1.3-μm AlxGayIn1-x-yAs/InP strained-layer quantum-well lasers for bubscriber loop applications,” IEEE Journal of Quantum Electronics, vol. 30, pp.551, 1994.
[16] B. Gönül, F. Koçak, H. Toktamiş, et al, “Theoretical Comparison of the band alignment of conventionally strained and strain-compensated phosphorus- aluminum- and nitrogen-based 1.3 μm QW lasers,” Chinese Journal of Physics, vol. 42, pp.764-775, 2004.