摘要
浮動閘極結構的穿隧氧化層厚度約8nm，而SONOS結構的穿隧氧化層大都在3nm以下，所以如何在穿隧氧化層這麼薄的情況下，仍使元件保証有十年以上的電荷保存力(data retention)是SONOS結構面臨的問題之一，在操作速度方面也是SONOS結構需改善的課題。
本論文的研究重點主要包含兩個方向：
（一）、利用能帶工程理論，設計堆疊式的穿隧氧化層及電荷儲存層。藉由High-K材料與矽基板有較小能隙差的特性，使快閃記憶體元件有較佳的寫入/抹除特性，卻不損及元件的電荷保存力。
（二）、應用電漿沉浸離子佈植(PIII)方式氮化High-K電荷儲存層及穿隧氧化層。藉由PIII有對離子分佈深度控制較佳和離子濃度調整精確等優點，可以精準地氮化電荷儲存層及穿隧氧化層，來提升SONOS-type元件的電荷保存力，解決快閃記憶體將元件之電荷儲存層換成High-k材料後所遇到的問題。

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