在現有的眾多鋯鈦酸鉛(PZT)厚膜製程中，厚度大於10μm以上，可以刮刀成形或塊材燒結等方法製備，而厚度小於1μm以內，可以物理氣相沈積(PVD)等方法製備，但厚度在1~10μm的範圍內，是傳統方法較不易達成的範圍。因此，本實驗便以此為目標嘗試利用有機金屬鹽裂解法(MOD)及電泳法(EPD)，兩種方法來達成製造PZT厚膜的目的。
在有機金屬鹽裂解法的研究中，嘗試添加與不添加PZT微粉，並藉由改變不同微粉濃度觀察厚度及電性上的變化。經實驗結果顯示，在不添加PZT微粉的實驗中，以前驅物(precursor)濃度為0.3M時最佳，且每層平均披覆膜厚厚度約為0.3μm。在極化量-電場曲線(P-E curve)量測到之Pr值12.2~28.99 μC/cm2；在添加PZT微粉方面，以前驅物及添加微粉濃度分別為0.25M及0.05M時較佳，每層平均披覆厚度約為0.68μm，極化量-電場曲線量測到之Pr值在22~33.6 μC/cm2，因此可確定添加微粉有益膜厚及極化量的增加。雖然添加微粉後的電性及膜厚較好，但在退火後膜面會產生突起顆粒影響元件製作。

在電泳法方面，以商用粉及以sol-gel法製成之PZT微粉進行披覆，當外加電壓為24V時，以濃度為5 wt%粉末在乙酸甲酯中懸浮及披覆效果較好。在經過3分鐘鍍膜時間下膜厚分別為5.4μm及3.3μm。本次電泳法經高溫燒結後因孔隙度過高，所以無法順利量得電性。

There are many methods to prepare PZT films. For examples, tape casting can be used to prepare films with thickness above 10 μm, and PVD methods can be used for films below 1μm thickness. However, it is difficult to prepare films of thickness between 1μm and 10μm by traditional methods. Therefore, the purpose of this study is to investigate new methods for depositing PZT films between 1μm and 10μm efficiently and inexpensively. The preparing methods we choose were MOD method and EPD method.
In preparing PZT films by MOD method, we have tried to investigate the thickness variation and electrical properties by comparing the cases with/without sol-gel PZT nano-powder. In both cases, the concentrations of precursor and PZT nano-powder were controlled. In the case without addition to PZT nano-powder, the best concentration of precursor was 0.3M, and an average layer thickness of 0.3μm was obtained. In P-E curve measurements, the Pr values for single layer to 9-layer deposit were in the range 12.2~28.99μC/cm2. In the case with PZT nano-powder addition, the optimum the concentrations of precursor and nano-powder were kept at 0.25M and 0.05M, respectively. The average thickness of each deposited layer was 0.68μm, and the Pr value ranged from 22 to 33.6μC/cm2. Adding PZT nano-powder was verified to be advantageous in increasing layer thickness and electrical polarization. However, protrusion was observed after thermal annealing that may cause problem when applying the films for device manufacturing.

In the EPD process, we have chosen two kinds of powder, a commercial one and the other produced by sol-gel method, for film deposition. For each kind of powder, we found that films were deposited well when the powder was mixed in methyl acetate to the concentration of 5wt% with applying dc voltage 24V. The film thickness of deposition for 3 minutes by using commercial and sol-gel powders was 5.4μm and 3.3μm, respectively. After high temperature sintering, the electrical property of films prepared by EPD method could not be measured. The reason may come from the short-circuit effect due to the high degree of porosity in the films.

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